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W947D6HBHX6E备选型号: IS42S16800F-6BLI

W947D6HBHX6E

Winbond Electronics

DRAM Chip Mobile LPDDR SDRAM 128M-Bit 8Mx16 1.8V 60-Pin VFBGA

10 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
-25°C~85°C TC
Tray
2011
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
8542.32.00.02
1.7V~1.95V
BOTTOM
未说明
1
1.8V
0.8mm
未说明
60
不合格
1.8V
1.95V
1.7V
128Mb 8M x 16
1
50mA
SYNCHRONOUS
166MHz
5ns
DRAM
Parallel
16b
8MX16
3-STATE
16
15ns
14b
128 Mb
0.00001A
COMMON
4096
24816
24816
9mm
1.025mm
ROHS3 Compliant
-
IS42S16800F-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V

6 Weeks
表面贴装
表面贴装
54-TFBGA
54
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
-
3V~3.6V
BOTTOM
-
1
3.3V
0.8mm
-
54
不合格
3.3V
3.6V
3V
128Mb 8M x 16
1
120mA
SYNCHRONOUS
166MHz
5.4ns
DRAM
Parallel
16b
8MX16
3-STATE
16
-
14b
128 Mb
0.002A
COMMON
4096
1248FP
1248
8mm
1.2mm
ROHS3 Compliant
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16800F-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V	对比
	MT47H64M8SH-25E:H	Micron Technology Inc.	存储器	60-TFBGA	IC SDRAM 512MBIT 400MHZ 60FBGA	对比
	IS42S16400J-6BL-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA T/R	对比