MOSFET, N CH, ESD, 60V, 2.8A, SOT223
17 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
4
7.994566mg
SILICON
1
-40°C~125°C TA
Tape & Reel (TR)
Automotive, AEC-Q101, INTELLIFET®
2011
e3
no
活跃
1 (Unlimited)
4
EAR99
75mOhm
Matte Tin (Sn)
HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
1.6W
3.3V 5V
DUAL
鸥翼
260
40
4
1
N-Channel
2.8A
On/Off
Single
低侧
增强型MOSFET
DRAIN
Non-Inverting
8.6 μs
通用型
SWITCHING
2.8A
18μs
60V
15 μs
2.8A
1V
1:1
5V
60V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
METAL-OXIDE SEMICONDUCTOR
75m Ω
75mOhm
1 V
自动重启
1.65mm
6.55mm
3.55mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
MOSFET, N CH, W ESD, 60V, 2A, SOT223
17 Weeks
表面贴装
表面贴装
TO-261-4, TO-261AA
4
7.994566mg
SILICON
1
-40°C~125°C TA
Tape & Reel (TR)
Automotive, AEC-Q101, INTELLIFET®
2010
e3
no
活跃
1 (Unlimited)
4
EAR99
150mOhm
Matte Tin (Sn)
逻辑电平兼容
3W
3.3V 5V
DUAL
鸥翼
260
40
4
1
N-Channel
2A
On/Off
Single
低侧
增强型MOSFET
DRAIN
Non-Inverting
6 μs
通用型
SWITCHING
2A
14μs
60V
19 μs
1.6A
700mV
1:1
5V
60V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
METAL-OXIDE SEMICONDUCTOR
150m Ω
150mOhm
1 V
自动重启
1.8mm
6.55mm
3.55mm
无SVHC
无
ROHS3 Compliant
-
1.3W
6A
150°C
125°C