N/A

-

12 Weeks

BGA-165

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

有

GS8672Q19BGE-450

Obsolete

GSI TECHNOLOGY

5.84

Tray

GS8672Q19BGE

3A991.B.2.B

SigmaQuad-II+

70 °C

0 °C

Memory & Data Storage

1.8 V

compliant

72 Mbit

2

1.49 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

300 MHz

+ 70 C

3.6 V

0 C

36

0 to 70 °C

Tray

GS881E32CGD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342TT19BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

450 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

有

200 MHz

+ 70 C

1.9 V

0 C

15

Bulk

GS8672Q18BGE

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

850 mA

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342S36BGD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

333 MHz

FBGA

-40 to 100 °C

Bulk

GS8342S36BGD

3A991.B.2.B

SigmaSIO DDR-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

785 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.215 A

37748736 bit

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

TQFP-100

100

200@Flow-Through/333@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

Compliant

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

0 to 85 °C

Bulk

GS8161Z36DGT

NBT

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5@Flow-Through/3@Pip

512 k x 36

19 Bit

SRAM

18 Mb

18

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

Compliant

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS8161Z18DGD-250V

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

0 to 85 °C

Bulk

GS8161Z18DGD

3A991.B.2.B

85 °C

0 °C

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Bulk

GS8342D10BGD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

540 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

Compliant

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

133.3@Flow-Through/150@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

0 to 85 °C

Bulk

85 °C

0 °C

18 Mbit

2

160 mA, 180 mA

7.5@Flow-Through/3.8

1 M x 18

20 b

18 Mb

18

无

N/A

-

表面贴装

BGA-165

165

165-FPBGA (15x13)

GSI Technology Inc.

GS8342T

活跃

Industrial grade

1.9 V

36 Bit

Synchronous

1.7 V

1.8000 V

300 MHz

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Tray

-40 to 100 °C

Tray

GS8342T36BGD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.8 V

36 Mbit

1

300 MHz

580 mA

0.45

SRAM

Parallel

1 M x 36

-

20 b

SRAM

36 Mb

36

Industrial

SRAM

1M x 36

无

N/A

-

10 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

SDR

Tray

GSI Technology Inc.

GS816218

活跃

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS816218DGD-250I

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

-40°C ~ 100°C (TJ)

Tray

GS816218DGD

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

250 MHz

230 mA, 250 mA

5.5 ns

SRAM

Parallel

1 M x 18

1.4 mm

18

-

20 b

SRAM

18 Mb

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

1M x 18

15 mm

13 mm

无

N/A

-

10 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

GSI Technology Inc.

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8342D

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342D18BGD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

300 MHz

-40 to 100 °C

Tray

GS8342D18BGD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

300 MHz

540 mA

SRAM

Parallel

Pipelined

2 M x 18

3-STATE

1.4 mm

18

-

19 Bit

SRAM

36 Mbit

0.21 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

2M x 18

15 mm

13 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

SDR

Details

NBT SRAM

GSI Technology Inc.

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

18

- 40 C

3.6 V

+ 85 C

Tray

GS8321Z

活跃

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

有

GS8321Z36AGD-250I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.61

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS8321Z36AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

250 MHz

250 mA, 305 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

-

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

1M x 36

15 mm

13 mm

N/A

-

10 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

Synchronous

512 kWords/kB

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 100 C

3.6 V

- 40 C

36

GSI Technology Inc.

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS816036

活跃

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS816036DGT-250I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.74

QFP

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 85 °C

Tray

GS816036DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

250 MHz

250 mA, 270 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

-

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

512K x 36

20 mm

14 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 70 °C

Tray

GS8342D07BD

SigmaQuad-II+ B4

70 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

665 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

300 MHz

+ 70 C

3.6 V

0 C

36

0 to 70 °C

Tray

GS880E18CGT

DCD

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

Tray

GS8672T37BE

SigmaDDR-II+ B2

70 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.57 A

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

BGA

5.19

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

524288 words

GS8182S36BGD-167

有

70 °C

0.5 ns

未说明

PLASTIC/EPOXY

512000

3

Compliant

有

167 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Tray

GS8182S36BGD

e1

有

3A991.B.2.B

SigmaSIO DDR-II

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

380 mA

512 k x 36

1.4 mm

36

18 b

SRAM

18 Mb

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

Tray

GS8672T37BE

SigmaDDR-II+ B2

85 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.59 A

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

2000000

PLASTIC/EPOXY

0.45 ns

85 °C

GS8672T36BE-400

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.84

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS8672T36BE

3A991.B.2.B

SigmaDDR-II

70 °C

0 °C

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

OTHER

72 Mbit

1

SYNCHRONOUS

1.43 A

2 M x 36

1.5 mm

36

21 b

SRAM

72 Mb

72

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

Tray

GS8182D09BGD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

495 mA

2 M x 9

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342Q08BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

895 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

150 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

70 °C

无

GS8322Z18AD-150

150 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

0 to 85 °C

Bulk

GS8322Z18AD

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342S36BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.2

BGA

Commercial grade

300 MHz

FBGA

DDR

0 to 85 °C

Bulk

GS8342S36BGD

3A991.B.2.B

SigmaSIO DDR-II

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

675 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.2 A

37748736 bit

Commercial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

Tray

GS8672T37BGE

SigmaDDR-II+ B2

70 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.57 A

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无