N/A

-

BGA-165

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8662T36BD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

165

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302TT06GE

SigmaDDR-II+

85 °C

0 °C

Memory & Data Storage

165

1.8 V

144 Mbit

1

895 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Military grade

250 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

Non-Compliant

有

250 MHz

+ 125 C

2.7 V

- 55 C

21

-55 to 125 °C

Tray

GS816273CC

Pipeline

Memory & Data Storage

209

18 Mbit

8

5.5 ns

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Military

SRAM

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662T09BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

165

1.8 V

72 Mbit

1

590 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

2.5, 3.3 V

Synchronous

3.6 V

2.3 V

SyncBurst

Industrial grade

FBGA

SDR

2.3, 3 V

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

- 40 C

18

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

-40 to 100 °C

Bulk

GS832132AGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

165

36 Mbit

4

280 mA, 365 mA

4.5 ns

Flow-Through/Pipelined

1 M x 32

20 b

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 70 °C

Bulk

GS816136DGT

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

100

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 b

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-209

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

BGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

72 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

21

-40 to 85 °C

Tray

GS816272CC

SCD/DCD

85 °C

-40 °C

Memory & Data Storage

209

18 Mbit

8

275 mA, 360 mA

5.5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS864018GT-250IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Industrial grade

TQFP

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS864018GT

e3

有

3A991.B.2.B

同步突发

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

100

R-PQFP-G100

不合格

2 V

INDUSTRIAL

1.7 V

72 Mbit

2

SYNCHRONOUS

250 mA, 335 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

22 b

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662D37BGD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

165

1.8 V

72 Mbit

2

950 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

167 MHz

+ 70 C

2.7 V

0 C

18

0 to 70 °C

Tray

GS864032GT

同步突发

70 °C

0 °C

Memory & Data Storage

100

72 Mbit

4

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 32

21 Bit

SRAM

64 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

450 MHz

0 to 85 °C

GS8662D37BGD

85 °C

0 °C

165

1.8 V

72 Mbit

2

1.055 A

Pipelined

2 M x 36

19 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS81302T19E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

755 mA

8 M x 18

SRAM

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

Compliant

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

无

GS832236AD-200IV

200 MHz

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

1.8, 2.5 V

-40 to 100 °C

Bulk

GS832236AD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

165

R-PBGA-B165

不合格

2 V

1.8/2.5 V

INDUSTRIAL

1.7 V

36 Mbit

4

SYNCHRONOUS

235 mA, 270 mA

6.5@Flow-Through/3@P

1 M x 36

3-STATE

1.4 mm

36

20 b

SRAM

36 Mb

0.04 A

36

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

TQFP-100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

表面贴装

2.7, 3.6 V

36 Bit

512 kWords

Synchronous

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Bulk

GS816136DGT

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 85 C

1.9 V

- 40 C

18

-40 to 85 °C

Tray

GS8182D09BD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

165

1.8 V

18 Mbit

2

690 mA

Pipelined

2 M x 9

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

GSI技术

SigmaDDR-II

DDR

Non-Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8662R08BD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

435 mA

8 M x 8

SRAM

SRAM

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662Q08BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

165

1.8 V

72 Mbit

2

600 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662QT07BD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

165

1.8 V

72 Mbit

2

995 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

GSI技术

SigmaDDR-II+

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8662TT37BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

165

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133@Flow-Through/150@Pipelined MHz

0 to 85 °C

Bulk

GS8321E36AGD

85 °C

0 °C

165

36 Mbit

4

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302D10GE

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

165

1.8 V

144 Mbit

2

825 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Bulk

GS8161Z36DGT

NBT

85 °C

-40 °C

Memory & Data Storage

100

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Industrial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302D18E

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

165

1.8 V

144 Mbit

2

1.005 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

TQFP-100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

-40 to 85 °C

Tray

GS864032GT

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

100

72 Mbit

4

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

2 M x 32

21 Bit

SRAM

64 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

165

1.8 V

72 Mbit

2

745 mA

Pipelined

8 M x 9

21 Bit

72 Mbit

Industrial

无