GSI Technology GS816136DGT-333I

包装/外壳

TQFP-100

Maximum Clock Rate

222.2@Flow-Through/333@Pipelined MHz

Supplier Package

TQFP

Data Rate Architecture

SDR

Typical Operating Supply Voltage

2.5, 3.3 V

Minimum Operating Supply Voltage

2.3, 3 V

Mounting

表面贴装

Maximum Operating Supply Voltage

2.7, 3.6 V

Number of I/O Lines

36 Bit

Number of Words

512 kWords

Timing Type

Synchronous

RoHS

Compliant

Moisture Sensitive

有

Maximum Clock Frequency

333 MHz

Maximum Operating Temperature

+ 85 C

Supply Voltage-Max

3.6 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

36

Supply Voltage-Min

2.3 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

SyncBurst

Memory Types

SDR

Usage Level

Industrial grade

操作温度

-40 to 85 °C

包装

Bulk

系列

GS816136DGT

类型

Pipeline/Flow Through

最高工作温度

85 °C

最小工作温度

-40 °C

子类别

Memory & Data Storage

引脚数量

100

内存大小

18 Mbit

端口的数量

4

电源电流-最大值

280 mA, 335 mA

访问时间

4.5 ns

建筑学

Flow-Through/Pipelined

组织结构

512 k x 36

地址总线宽度

19 Bit

产品类别

SRAM

密度

18 Mbit

筛选水平

Industrial

产品类别

SRAM

辐射硬化

无