N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

400 MHz

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS81302D20E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

未说明

70 °C

无

GS88132CD-250

262144 words

3.3 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

250 MHz

+ 70 C

3.6 V

0 C

GS88132CD

3A991.B.2.B

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

165

R-PBGA-B165

不合格

3.6 V

COMMERCIAL

3 V

9 Mbit

SYNCHRONOUS

155 mA, 195 mA

5.5 ns

256KX32

1.4 mm

32

9

SERIAL

缓存SRAM

15 mm

13 mm

N/A

-

BGA-165

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Tray

GS881E18CD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

165 mA, 200 mA

5.5 ns

512 k x 18

SRAM

SRAM

N/A

-

BGA-165

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

333 MHz

FBGA

QDR

-40 to 100 °C

GS81302D09GE

165

144 Mbit

2

900 mA

Pipelined

16 M x 9

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302T37E

SigmaDDR-II+ B2

Memory & Data Storage

165

144 Mbit

1

1.005 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

165

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8182T37BGD-300

300 MHz

524288 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.2

BGA

LBGA, BGA165,11X15,40

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

SYNCHRONOUS

0.455 mA

512KX36

3-STATE

1.4 mm

36

0.155 A

18874368 bit

PARALLEL

COMMON

DDR SRAM

1.7 V

15 mm

13 mm

N/A

-

N/A

-

8 Weeks

BGA-165

YES

165

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-55 °C

未说明

0.45 ns

125 °C

无

GS8662T20BD-450M

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Military grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

18 Bit

Tray

GS8662T20BD

3A991.B.2.B

SigmaQuad-II+

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

165

R-PBGA-B165

1.9 V

MILITARY

1.7 V

72 Mbit

SYNCHRONOUS

Pipelined

4 M x 18

1.4 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Military

PARALLEL

DDR SRAM

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-260

YES

260

1.4 V

表面贴装

有

675 MHz

+ 100 C

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

无

GS8673ED36BK-675I

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.81

Industrial grade

675/450 MHz

BGA

QDR

1.3500 V

1.3 V

Synchronous

2 MWords

36 Bit

-40 to 85 °C

Tray

GS8673ED36BK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

260

R-PBGA-B260

1.4 V

1.3 V

72 Mbit

SYNCHRONOUS

3.17 A

Pipelined

2 M x 36

2.3 mm

36

19 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

SRAM

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7.5 ns

70 °C

有

GS880E18CGT-150V

150 MHz

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

0 to 70 °C

Tray

GS880E18CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

100

R-PQFP-G100

不合格

2 V

1.8/2.5 V

COMMERCIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

NBT SRAM

Details

SDR

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS881Z36CGD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

175 mA, 215 mA

5.5 ns

256 k x 36

SRAM

SRAM

N/A

-

N/A

-

12 Weeks

BGA-260

YES

260

Synchronous

4 MWords

18 Bit

1.4 V

表面贴装

有

550 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

Details

DDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

有

GS8673ET18BGK-550

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Commercial grade

550/375 MHz

BGA

DDR

1.3500 V

1.25 V

0 to 70 °C

Tray

GS8673ET18BGK

3A991.B.2.B

SigmaDDR-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

260

R-PBGA-B260

1.4 V

OTHER

1.25 V

72 Mbit

SYNCHRONOUS

1.49 A

Pipelined

4 M x 18

2.3 mm

18

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

SRAM

22 mm

14 mm

N/A

-

N/A

-

BGA-165

NBT SRAM

N

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS881Z36CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

155 mA, 195 mA

5.5 ns

256 k x 36

SRAM

SRAM

N/A

-

BGA-165

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Tray

GS88236CD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

175 mA, 215 mA

5.5 ns

256 k x 36

SRAM

SRAM

N/A

-

BGA-165

SigmaDDR-II+

N

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302TT19E

SigmaDDR-II+ B2

Memory & Data Storage

165

144 Mbit

1

1 A

Pipelined

8 M x 18

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

Details

333 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

1.9 V

Tray

GS82582QT19GE

SigmaQuad-II+ B2

288 Mbit

1.02 A

16 M x 18

N/A

-

BGA-119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Industrial grade

200 MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

-40 to 85 °C

Tray

GS81284Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

119

144 Mbit

4

385 mA, 475 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

YES

165

无

GS8182R36BD-250

524288 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

165

R-PBGA-B165

不合格

1.9 V

COMMERCIAL

1.7 V

SYNCHRONOUS

512KX36

1.4 mm

36

18874368 bit

PARALLEL

DDR SRAM

15 mm

13 mm

N/A

-

BGA-260

1.3500 V

1.3 V

Synchronous

2 MWords

36 Bit

1.4 V

表面贴装

625 MHz

+ 85 C

1.4 V

0 C

1.3 V

SMD/SMT

Parallel

Commercial grade

625/400 MHz

BGA

QDR

0 to 70 °C

GS8673EQ36BGK

260

72 Mbit

2.97 A

Pipelined

2 M x 36

20 Bit

72 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS882Z18CGD-150I

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Tray

GS882Z18CGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

2.7 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

140 mA, 150 mA

7.5 ns

512 k x 18

1.4 mm

18

SRAM

9437184 bit

PARALLEL

ZBT SRAM

SRAM

15 mm

13 mm

N/A

-

BGA-165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

450 MHz

FBGA

QDR

0 to 85 °C

GS81302D06E

165

144 Mbit

2

1.175 mA

Pipelined

16 M x 8

22 Bit

144 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662TT37BGD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

400 MHz

0 to 85 °C

Tray

GS8662TT37BGD

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

1.5/1.8,1.8 V

COMMERCIAL

1.7 V

72 Mbit

1

SYNCHRONOUS

800 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

0.245 A

75497472 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT07E

SigmaDDR-II+ B2

Memory & Data Storage

165

144 Mbit

1

765 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM