GSI Technology GS81302D20E-400
- 收藏
- 对比
GS81302D20E-400
2984-GS81302D20E-400
存储器
BGA-165
大陆
立即发货

DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
1最小包装量--
GS81302D20E-400详情
GSI Technology GS81302D20E-400重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-165
Maximum Clock Rate
400 MHz
Data Rate Architecture
QDR
Typical Operating Supply Voltage
1.8000 V
Minimum Operating Supply Voltage
1.7 V
Timing Type
Synchronous
Number of Words
8 MWords
Number of I/O Lines
18 Bit
Maximum Operating Supply Voltage
1.9 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
400 MHz
Maximum Operating Temperature
+ 70 C
Supply Voltage-Max
1.9 V
Minimum Operating Temperature
0 C
Factory Pack QuantityFactory Pack Quantity
10
Supply Voltage-Min
1.7 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SigmaQuad-II+
RoHS
N
Memory Types
QDR-II
Usage Level
Commercial grade
操作温度
0 to 85 °C
系列
GS81302D20E
包装
Tray
类型
SigmaQuad-II+
子类别
Memory & Data Storage
内存大小
144 Mbit
端口的数量
2
电源电流-最大值
1.175 A
建筑学
Pipelined
组织结构
8 M x 18
地址总线宽度
21 Bit
产品类别
SRAM
密度
144 Mbit
筛选水平
Commercial
产品类别
SRAM
GS81302D20E-400拓展信息
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology
GSI Technology







哦! 它是空的。