N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302D10GE

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

825 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

36 Bit

2, 2.7 V

Compliant

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

18

- 40 C

2.7 V

+ 85 C

200 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

无

GS832236AD-200IV

200 MHz

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

Bulk

GS832236AD

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

235 mA, 270 mA

6.5@Flow-Through/3@P

1 M x 36

3-STATE

1.4 mm

36

20 b

SRAM

36 Mb

0.04 A

36

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

表面贴装

2.7, 3.6 V

36 Bit

512 kWords

Synchronous

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Bulk

GS816136DGT

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

GS8321E36AGD

85 °C

0 °C

36 Mbit

4

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

165

Compliant

333 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

-40 to 100 °C

GS8662S09BD

100 °C

-40 °C

1.8 V

72 Mbit

2

640 mA

0.45

8 M x 9

22 b

72 Mb

72

无

N/A

-

BGA-119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

250 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

FBGA

0 to 70 °C

GS864236GB

70 °C

0 °C

72 Mbit

4

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 b

72 Mb

Commercial

无

N/A

-

165

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

Compliant

-40 to 85 °C

85 °C

-40 °C

1.8 V

1

Pipelined

20 Bit

18 Mbit

Industrial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342D08BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

715 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8662T06BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

770 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

15

0 to 70 °C

Tray

GS864436E

同步突发

70 °C

0 °C

Memory & Data Storage

72 Mbit

4

270 mA, 345 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302S36GE

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.055 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8662TT37BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

695 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

YES

165

165

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302D19GE-300I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

300 MHz

QDR

1.8000 V

-40 to 100 °C

Tray

GS81302D19GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

825 mA

Pipelined

8 M x 18

1.5 mm

18

21 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8662TT06BD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

400 MHz

FBGA

DDR

0 to 85 °C

Bulk

GS8662TT06BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

1

SYNCHRONOUS

625 mA

Pipelined

8 M x 8

3-STATE

1.4 mm

8

22 Bit

SRAM

72 Mbit

0.235 A

67108864 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

DDR

Industrial grade

400 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

-40 to 100 °C

Bulk

GS8342D36BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

915 mA

0.45

1 M x 36

18 b

SRAM

36 Mb

36

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

Industrial grade

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

DDR

SigmaQuad-II+

GSI技术

-40 to 100 °C

Bulk

GS8342D10BD

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

675 mA

0.45

4 M x 9

20 b

SRAM

36 Mb

36

Industrial

SRAM

无

N/A

-

144

Compliant

95 °C

0 °C

1.8 V

9 b

24 b

288 Mb

400 MHz

无

N/A

-

8 Weeks

YES

165

165

未说明

0.45 ns

70 °C

无

GS8182R09BD-375

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

0 to 70 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

1

SYNCHRONOUS

Pipelined

2MX9

1.4 mm

9

19 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

8 Weeks

表面贴装

BGA-119

YES

119

119-FPBGA (22x14)

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS864236

活跃

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS864236GB-250I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.59

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS864236GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

250 MHz

275 mA, 380 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

-

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

2M x 36

22 mm

14 mm

N/A

-

表面贴装

BGA-165

165

165-FPBGA (15x17)

GSI Technology Inc.

Details

DDR-II

Tray

GS81302T18

活跃

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

-40 to 100 °C

Tray

GS81302T18GE

SigmaDDR-II B2

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.7V ~ 1.9V

144 Mbit

350 MHz

810 mA

0.45

SRAM

Parallel

8 M x 18

-

SRAM

144

SRAM

8M x 18

N/A

-

TQFP-100

100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

333 MHz

+ 100 C

2.7 V

- 40 C

18

-40 to 100 °C

Bulk

GS816118DGT

同步突发

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.2 ns

70 °C

有

GS8322Z36AGD-375

375 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

0 to 85 °C

Bulk

GS8322Z36AGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

TQFP

125@Flow-Through/167@Pipelined MHz

Compliant

有

167 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS864036GT-167V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Commercial grade

表面贴装

2, 2.7 V

36 Bit

2 MWords

0 to 70 °C

Tray

GS864036GT

e3

有

3A991.B.2.B

同步突发

Matte Tin (Sn)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

GSI技术

SigmaSIO DDR-II

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Tray

GS8662S36BD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

810 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

333 MHz

+ 100 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

-40 to 100 °C

Bulk

GS816036DGT

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

280 mA, 335 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

20 b

SRAM

18 Mbit

Industrial

SRAM

无