N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Tray

GS881E36CGD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

14

0 C

3.6 V

+ 70 C

167 MHz

BGA, BGA119,7X17,50

网格排列

3

4000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

8 ns

70 °C

有

GS8642Z18GB-167

167 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

0 to 70 °C

Tray

GS8642Z18GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

195 mA, 240 mA

8 ns

Flow-Through/Pipelined

4 M x 18

3-STATE

1.99 mm

18

22 Bit

SRAM

72 Mbit

0.1 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

Tray

GS8662S08BGD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

580 mA

8 M x 8

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

5.5 ns

85 °C

有

GS8322Z18AGB-250IV

250 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

-40 to 100 °C

Bulk

GS8322Z18AGB

3A991.B.2.B

NBT

100 °C

-40 °C

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

表面贴装

1.9 V

36 Bit

2 MWords

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662QT37BD-333I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Bulk

GS8662QT37BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Lead (Sn/Pb)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

1.11 A

Pipelined

2 M x 36

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Bulk

GS8662R09BD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

535 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

+ 70 C

200 MHz

有

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

1.9 V

0 to 85 °C

Bulk

GS8662QT37BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

740 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mb

Commercial

SRAM

无

N/A

-

BGA-119

119

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

42

-40 to 85 °C

Tray

GS882Z36CGB

NBT

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Bulk

GS8662T08BD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

435 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

YES

260

未说明

有

GS8673ET18BGK-725IS

4194304 words

1.35 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.72

Compliant

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

3A991.B.2.B

85 °C

-40 °C

8542.32.00.41

CMOS

1.35 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

SYNCHRONOUS

4MX18

2.3 mm

18

72 Mb

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

22 mm

14 mm

无

N/A

-

BGA-209

209

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

153@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

-40 to 85 °C

Tray

GS8322Z72C

NBT

85 °C

-40 °C

Memory & Data Storage

36 Mbit

8

285 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

Tray

GS8662S08BGD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

640 mA

8 M x 8

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

165

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Compliant

0 to 70 °C

70 °C

0 °C

1.8 V

1

Pipelined

19 Bit

18 Mbit

Commercial

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

181.8 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS880F32CGT

流过

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

140 mA

5.5 ns

Flow-Through

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

1.8000 V

1.7 V

8 Bit

1.9 V

Compliant

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

0 to 85 °C

Bulk

GS8342TT06BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

730 mA

0.45

4 M x 8

21 b

SRAM

36 Mb

36

SRAM

无

N/A

-

表面贴装

165-LBGA

165

165-FPBGA (15x13)

GSI Technology Inc.

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

表面贴装

2.7, 3.6 V

36 Bit

256 kWords

Synchronous

2.3, 3 V

Compliant

Tray

GS881Z

活跃

Volatile

Parallel

SMD/SMT

2.3 V

- 40 C

3.6 V

+ 85 C

300 MHz

-40 to 85 °C

-

85 °C

-40 °C

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

9Mbit

1

300 MHz

185 mA, 245 mA

5 ns

SRAM

Parallel

Flow-Through/Pipelined

256 k x 36

-

18 Bit

9 Mb

Industrial

256K x 36

无

N/A

-

12 Weeks

表面贴装

165-LBGA

YES

165

165-FPBGA (15x17)

165

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

Tray

GS81302TT20

活跃

Volatile

GSI Technology Inc.

500 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302TT20GE-500I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

7.62

BGA

Industrial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

-40 to 100 °C

Bulk

-

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

SRAM - Quad Port, Synchronous

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144Mbit

1

SYNCHRONOUS

500 MHz

1.08 A

450 ps

SRAM

Parallel

Pipelined

8 M x 18

1.5 mm

18

-

22 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

8M x 18

17 mm

15 mm

无

N/A

-

8 Weeks

表面贴装

100-LQFP

YES

100

100-TQFP (20x14)

100

LQFP,

GSI Technology Inc.

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS8640Z18GT-167IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.89

QFP

Industrial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

Tray

GS8640Z

活跃

Volatile

-40 to 85 °C

-

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

SRAM - Synchronous, ZBT

1.7V ~ 2V, 2.3V ~ 2.7V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72Mbit

2

SYNCHRONOUS

167 MHz

SRAM

Parallel

Flow-Through/Pipelined

4MX18

1.6 mm

18

-

22 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

4M x 18

20 mm

14 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

GSI Technology Inc.

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

+ 85 C

500 MHz

有

Tray

GS8662D

活跃

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662DT20BGD-500I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

BGA

Industrial grade

500 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS8662DT20BGD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

500 MHz

900 mA

SRAM

Parallel

Pipelined

4 M x 18

1.4 mm

18

-

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

4M x 18

15 mm

13 mm

N/A

-

10 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

GSI Technology Inc.

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Tray

GS8342TT

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342TT20BGD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.9

BGA

Industrial grade

500 MHz

-40 to 100 °C

Tray

GS8342TT20BGD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

500 MHz

740 mA

450 ps

SRAM

Parallel

Pipelined

2 M x 18

3-STATE

1.4 mm

18

-

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

2M x 18

15 mm

13 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

36 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

333 MHz

有

333 MHz

+ 85 C

1.9 V

- 40 C

GSI Technology Inc.

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

活跃

GS8662Q

Tray

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662QT37BGD-333I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

表面贴装

1.9 V

-40 to 100 °C

Tray

GS8662QT37BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

333 MHz

1.11 A

SRAM

Parallel

Pipelined

2 M x 36

1.4 mm

36

-

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

2M x 36

15 mm

13 mm

N/A

-

8 Weeks

表面贴装

BGA-119

YES

119

119-FPBGA (22x14)

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

14

GSI Technology Inc.

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS832236

活跃

BGA, BGA119,7X17,50

网格排列

3

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4.5 ns

85 °C

有

GS832236AGB-333I

333 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

FBGA

-40 to 100 °C

Tray

GS832236AGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

-

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

1M x 36

22 mm

14 mm

N/A

-

12 Weeks

表面贴装

BGA-260

YES

260

260-BGA (22x14)

260

36 Bit

1.4 V

表面贴装

有

675 MHz

+ 100 C

1.4 V

- 40 C

GSI Technology Inc.

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

DDR

Tray

GS8673ED

活跃

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

有

GS8673ED36BGK-675I

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.44

Industrial grade

675/450 MHz

BGA

QDR

1.3500 V

1.3 V

Synchronous

2 MWords

-40 to 85 °C

Tray

GS8673ED36BGK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.3V ~ 1.4V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

675 MHz

3.17 A

0.4

SRAM

Parallel

Pipelined

2 M x 36

2.3 mm

36

-

19 Bit

SRAM

72 Mbit

72

Industrial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

2M x 36

22 mm

14 mm

N/A

-

表面贴装

BGA-165

165

165-FPBGA (15x13)

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Tray

GS8662R

活跃

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662R36BGD

SigmaDDR-II B4

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.7V ~ 1.9V

72 Mbit

1

350 MHz

765 mA

SRAM

Parallel

Pipelined

2 M x 36

-

21 Bit

SRAM

72 Mbit

Industrial

SRAM

2M x 36

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

SigmaDDR-II

Details

DDR

Tray

GS8662R

活跃

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8662R36BGD

SigmaDDR-II B4

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.7V ~ 1.9V

72 Mbit

1

400 MHz

810 mA

SRAM

Parallel

Pipelined

2 M x 36

-

21 Bit

SRAM

72 Mbit

Industrial

SRAM

2M x 36