GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	底架	安装类型	包装/外壳	表面安装	引脚数	供应商器件包装	终端数量					Current - Supply (Nom)												厂商																																			操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	最高工作温度	最小工作温度	附加功能	HTS代码	子类别	技术	电压 - 供电	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	频率	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	时钟频率	电源电流-最大值	访问时间	内存格式	内存接口	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	写入周期时间 - 字符、页面	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	同步/异步	字长	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS8160Z36DGT-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	150 MHz	+ 85 C	3.6 V	0 C	2.3 V		SMD/SMT	Parallel	LQFP,	FLATPACK, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS8160Z36DGT-150	2.5 V	LQFP	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	4.89	QFP	Commercial grade				133.3@Flow-Through/150@Pipelined MHz	TQFP	SDR	2.5, 3.3 V		2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	0 to 85 °C					3A991.B.2.B					PIPELINE ARCHITECTURE, FLOW-THROUGH, ALSO OPERATES AT 3.3V	8542.32.00.41		CMOS		QUAD	鸥翼	未说明	1	0.65 mm	compliant		R-PQFP-G100	不合格		COMMERCIAL	18 Mbit	4	SYNCHRONOUS		180 mA, 190 mA	7.5 ns			Flow-Through/Pipelined	512 k x 36		1.6 mm	36		19 Bit		18 Mbit		18874368 bit	Commercial	PARALLEL				ZBT SRAM		2.7 V	2.3 V			20 mm	14 mm
GS882Z18CGB-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	YES	119	119	网格排列	3	512000		PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS882Z18CGB-200	524288 words	2.5 V	BGA	RECTANGULAR	GSI技术		活跃	GSI TECHNOLOGY	4.57	BGA					BGA,				e1	有	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41		CMOS		BOTTOM	BALL	260	1	1.27 mm	compliant		R-PBGA-B119	不合格		COMMERCIAL			SYNCHRONOUS							512KX18		1.77 mm	18						9437184 bit		PARALLEL				ZBT SRAM		2.7 V	2.3 V			22 mm	14 mm
GS816018DGT-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	GSI技术	SyncBurst	SDR							153.8@Flow-Through/200@Pipelined MHz	TQFP	1.8, 2.5 V	1.7, 2.3 V		Synchronous	18 Bit	2, 2.7 V	Compliant	有	200 MHz	+ 85 C	3.6 V	0.469316 oz	0 C	18		2.3 V	SMD/SMT	Parallel	GSI技术	0 to 85 °C	Bulk	GS816018DGT				Pipeline/Flow Through		85 °C	0 °C			Memory & Data Storage														18 Mbit	2			195 mA	6.5@Flow-Through/3@P				1 M x 18					21 b	SRAM	18 Mb		18										SRAM				无
GS816136DGD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	LBGA,		GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS816136DGD-200	524288 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	4.78	BGA				有	200 MHz	+ 70 C	3.6 V		0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR		Tray	GS816136DGD			3A991.B.2.B	Pipeline/Flow Through				FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant		R-PBGA-B165			COMMERCIAL	18 Mbit		SYNCHRONOUS		210 mA	6.5 ns				512 k x 36		1.4 mm	36			SRAM			18874368 bit		PARALLEL				缓存SRAM		2.7 V	2.3 V	SRAM		15 mm	13 mm
GS8162Z36BD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	165	190 mA				512000	Compliant													70 °C	0 °C												133.3 MHz						4				7.5 ns									19 b		18 Mb						Synchronous	36 b			3.6 V	2.3 V					无
GS8342Q09AE-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1				Compliant																70 °C	0 °C					1.8 V													2													21 b		36 Mb																无
GS8160Z36DGT-333IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	TQFP-100	100	100-TQFP (20x14)	GSI Technology Inc.	SMD/SMT	1.7 V	18	- 40 C	2.7 V	+ 100 C	333 MHz	有	Tray	GS8160Z36	活跃	Industrial grade					333 MHz	TQFP	SDR	1.8, 2.5 V		1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	SDR	Details	NBT SRAM	GSI技术	GSI技术	Parallel	-40 to 85 °C	Tray	GS8160Z36DGT				NBT						Memory & Data Storage	SRAM - Synchronous, ZBT	1.7V ~ 2V, 2.3V ~ 2.7V												18 Mbit	4		333 MHz	260 mA, 330 mA	5 ns	SRAM	Parallel	Flow-Through/Pipelined	512 k x 36				-	19 Bit	SRAM	18 Mbit			Industrial									SRAM	512K x 36
GS8662T18BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	BGA-165	165	165-FPBGA (13x15)	GSI Technology Inc.	GSI技术	SigmaDDR-II	Details	DDR-II	Tray	GS8662T	活跃	Industrial grade					400 MHz	FBGA	DDR	1.8000 V		Synchronous	4 MWords	18 Bit	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	-40 to 100 °C	Tray	GS8662T18BGD				SigmaDDR-II B2						Memory & Data Storage	SRAM - Quad Port, Synchronous, DDR II	1.7V ~ 1.9V												72 Mbit	1		400 MHz	635 mA		SRAM	Parallel	Pipelined	4 M x 18				-	22 Bit	SRAM	72 Mbit			Industrial									SRAM	4M x 18
GS881Z36CGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	BGA-165	165	165-FPBGA (13x15)	GSI Technology Inc.	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Tray	GS881Z	活跃	Industrial grade					222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	2.5, 3.3 V		2.3, 3 V	Synchronous	256 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	36	-40 to 85 °C	Tray	GS881Z36CGD				NBT Pipeline/Flow Through						Memory & Data Storage	SRAM - Synchronous, ZBT	2.3V ~ 2.7V, 3V ~ 3.6V												9 Mbit	1		333 MHz	200 mA, 260 mA	4.5 ns	SRAM	Parallel	Flow-Through/Pipelined	256 k x 36				-	18 Bit	SRAM	9 Mbit			Industrial									SRAM	256K x 36
GS8342Q36BGD-357I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	BGA-165	165	165-FPBGA (13x15)	GSI Technology Inc.	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Tray	GS8342Q	活跃	Industrial grade					357 MHz	FBGA	QDR	1.8000 V		1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	357 MHz	+ 85 C	1.9 V	- 40 C	15	-40 to 100 °C	Tray	GS8342Q36BGD				SigmaQuad-II						Memory & Data Storage	SRAM - Quad Port, Synchronous, QDR II	1.7V ~ 1.9V												36 Mbit	2		357 MHz	1.155 A		SRAM	Parallel	Pipelined	1 M x 36				-	19 Bit	SRAM	36 Mbit			Industrial									SRAM	1M x 36
GS8320Z18AGT-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	表面贴装	100-LQFP	YES	100	100-TQFP (20x14)	100	- 40 C	GSI Technology Inc.	2.3 V	SMD/SMT	Parallel	LQFP,	FLATPACK, LOW PROFILE	2000000	PLASTIC/EPOXY	未说明	有	GS8320Z18AGT-250I	2097152 words	2.5 V	LQFP	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	4.85		181.8@Flow-Through/250@Pipelined MHz	TQFP	2.5, 3.3 V	2.3, 3 V		Synchronous	18 Bit	2.7, 3.6 V	Tray	GS8320Z	活跃	Volatile	250 MHz	+ 85 C	3.6 V	-40 to 85 °C		-			3A991.B.2.B					IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE			SRAM - Synchronous, ZBT	2.3V ~ 2.7V, 3V ~ 3.6V	QUAD	鸥翼	未说明	1	0.65 mm	compliant		R-PQFP-G100				36Mbit		SYNCHRONOUS	250 MHz	235 mA, 275 mA	5.5@Flow-Through/2.5	SRAM	Parallel		2 M x 18		1.6 mm	18	-					36		PARALLEL				ZBT SRAM		2.7 V	2.3 V		2M x 18	20 mm	14 mm
GS8642Z36GB-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	表面贴装	BGA-119	YES	119	119-FPBGA (22x14)	119	SDR	1.8, 2.5 V		1.7, 2.3 V	Synchronous	2 MWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	GSI Technology Inc.	14	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Tray	GS8642Z	活跃	BGA,	网格排列	3	2000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS8642Z36GB-250IV	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Industrial grade		166.6@Flow-Through/250@Pipelined MHz	FBGA	-40 to 85 °C	Tray	GS8642Z36GB	e1	有	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	SRAM - Synchronous, ZBT	1.7V ~ 2V, 2.3V ~ 2.7V	BOTTOM	BALL	260	1	1.27 mm	compliant		R-PBGA-B119	不合格		INDUSTRIAL	72 Mbit	4	SYNCHRONOUS	250 MHz	275 mA, 380 mA	6.5 ns	SRAM	Parallel	Flow-Through/Pipelined	2 M x 36		1.99 mm	36	-	21 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL				ZBT SRAM		2 V	1.7 V	SRAM	2M x 36	22 mm	14 mm
GS816136DGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	BGA-165	165	165-FPBGA (13x15)	GSI Technology Inc.	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Tray	GS816136	活跃	Industrial grade					222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	2.5, 3.3 V		2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	36	-40 to 85 °C	Tray	GS816136DGD				Pipeline/Flow Through						Memory & Data Storage	SRAM - Synchronous, Standard	2.3V ~ 2.7V, 3V ~ 3.6V												18 Mbit	4		333 MHz	280 mA, 335 mA	4.5 ns	SRAM	Parallel	Flow-Through/Pipelined	512 k x 36				-	19 Bit	SRAM	18 Mbit			Industrial									SRAM	512K x 36
GS8342T18BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	BGA-165	165	165-FPBGA (13x15)	GSI Technology Inc.	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Tray	GS8342T	活跃	Industrial grade					400 MHz	FBGA	DDR	1.8000 V		1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	-40 to 100 °C	Tray	GS8342T18BGD				SigmaDDR-II B2						Memory & Data Storage	SRAM - Quad Port, Synchronous, DDR II	1.7V ~ 1.9V												36 Mbit	1		400 MHz	610 mA		SRAM	Parallel	Pipelined	2 M x 18				-	21 Bit	SRAM	36 Mbit			Industrial									SRAM	2M x 18
GS816018DGT-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	表面贴装	TQFP-100	YES	100	100-TQFP (20x14)	100	Details	SDR	Tray	GSI Technology Inc.	GS816018	活跃	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	5.5 ns	85 °C	有	GS816018DGT-250I	1048576 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	4.84	QFP		有	250 MHz	+ 100 C	3.6 V		- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	-40°C ~ 100°C (TJ)	Tray	GS816018DGT			3A991.B.2.B	Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	SRAM - Synchronous, Standard	2.3V ~ 2.7V, 3V ~ 3.6V	QUAD	鸥翼	未说明	1	0.65 mm	compliant		R-PQFP-G100			INDUSTRIAL	18 Mbit		SYNCHRONOUS	250 MHz	230 mA, 250 mA	5.5 ns	SRAM	Parallel		1 M x 18		1.6 mm	8	-		SRAM			8388608 bit		PARALLEL				缓存SRAM		2.7 V	2.3 V	SRAM	1M x 18	20 mm	14 mm
GS88036CGT-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	TQFP-100	100	100-TQFP (20x14)	GSI Technology Inc.	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Tray	GS88036	活跃	Industrial grade					TQFP	SDR	2.5, 3.3 V	2.3, 3 V		Synchronous	256 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	-40 to 85 °C	Tray	GS88036CGT				Pipeline/Flow Through						Memory & Data Storage	SRAM - Synchronous, Standard	2.3V ~ 2.7V, 3V ~ 3.6V												9 Mbit	4		333 MHz	200 mA, 260 mA	4.5 ns	SRAM	Parallel	Flow-Through/Pipelined	256 k x 36				-		SRAM	9 Mbit			Industrial									SRAM	256K x 36
GS816036DGT-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade							133.3@Flow-Through/150@Pipelined MHz	TQFP	SDR	2.5, 3.3 V		2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 85 C	3.6 V	0 C		36	0 to 85 °C	Tray	GS816036DGT				Pipeline/Flow Through						Memory & Data Storage														18 Mbit	4			180 mA, 190 mA	7.5 ns			Flow-Through/Pipelined	512 k x 36					20 Bit	SRAM	18 Mbit			Commercial									SRAM
GS8342Q36BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	QDR	1.8000 V		1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C		15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342Q36BGD-333I	333 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	4.91	BGA	Industrial grade				333 MHz	FBGA	-40 to 100 °C	Tray	GS8342Q36BGD			3A991.B.2.B	SigmaQuad-II				流水线结构	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant		R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS		1.065 A	450 ps			Pipelined	1 M x 36	3-STATE	1.4 mm	36		19 Bit	SRAM	36 Mbit	0.245 A	37748736 bit	Industrial	PARALLEL	SEPARATE			QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM		15 mm	13 mm
GS8342Q09BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	Synchronous	4 MWords	9 Bit	表面贴装	有	250 MHz	+ 85 C	1.9 V	0.541455 oz	- 40 C	15		1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	0.45 ns	85 °C	无	GS8342Q09BD-250I	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.06	BGA	Industrial grade				250 MHz	FBGA	QDR	1.8000 V		-40 to 100 °C	Tray	GS8342Q09BD			3A991.B.2.B	SigmaQuad-II				流水线结构	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL		1	1 mm	compliant		R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS		675 mA	450 ps			Pipelined	4 M x 9	3-STATE	1.4 mm	9		21 Bit	SRAM	36 Mbit	0.215 A	37748736 bit	Industrial	PARALLEL	SEPARATE			QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM		15 mm	13 mm
GS8160Z36DGT-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	TQFP-100	100	100-TQFP (20x14)	GSI Technology Inc.	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	Tray	GS8160Z36	活跃	Industrial grade					222.2@Flow-Through/333@Pipelined MHz	TQFP	SDR	2.5, 3.3 V		2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	Compliant	有	333 MHz	+ 100 C	3.6 V	- 40 C	-40 to 100 °C	Bulk	GS8160Z36DGT				NBT Pipeline/Flow Through		100 °C	-40 °C			Memory & Data Storage	SRAM - Synchronous, ZBT	2.3V ~ 2.7V, 3V ~ 3.6V												18 Mbit	4		333 MHz	280 mA, 335 mA	4.5 ns	SRAM	Parallel	Flow-Through/Pipelined	512 k x 36				-	19 Bit	SRAM	18 Mbit			Industrial									SRAM	512K x 36			无
GS8320Z18AGT-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	TQFP-100	100	100-TQFP (20x14)	GSI Technology Inc.	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Tray	GS8320Z	活跃	Industrial grade					333 MHz	TQFP	SDR	2.5, 3.3 V		2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	18	-40 to 85 °C	Tray	GS8320Z18AGT				NBT Pipeline/Flow Through						Memory & Data Storage	SRAM - Synchronous, ZBT	2.3V ~ 2.7V, 3V ~ 3.6V												36 Mbit	2		333 MHz	255 mA, 340 mA	4.5 ns	SRAM	Parallel	Flow-Through/Pipelined	2 M x 18				-	21 Bit	SRAM	36 Mbit			Industrial									SRAM	2M x 18
GS8320Z18AGT-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100				133.3@Flow-Through/150@Pipelined MHz	TQFP	SDR	1.8, 2.5 V		1.7, 2.3 V	Synchronous	2 MWords	18 Bit	2, 2.7 V	表面贴装	Compliant	150 MHz	+ 70 C	2.7 V	0 C		1.7 V	SMD/SMT	Parallel	Commercial grade				0 to 85 °C	Bulk	GS8320Z18AGT						85 °C	0 °C																	36 Mbit	2			185 mA, 200 mA	7.5 ns			Flow-Through/Pipelined	2 M x 18					21 Bit		36 Mbit			Commercial													无
GS8322Z36AD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks, 5 Days	BGA-165	YES	165	165		Synchronous	表面贴装	2.7, 3.6 V	36 Bit	1 MWords	有	200 MHz	+ 70 C	3.6 V	0 C	14		2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	6.5 ns	70 °C	无	GS8322Z36AD-200	200 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	4.74	BGA	Commercial grade				FBGA	SDR	2.5, 3.3 V	2.3, 3 V	0 to 85 °C	Tray	GS8322Z36AD	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant		R-PBGA-B165	不合格	2.5/3.3 V	COMMERCIAL	36 Mbit	4	SYNCHRONOUS		205 mA, 240 mA	6.5 ns			Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36		20 b	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON			ZBT SRAM	2.3 V	2.7 V	2.3 V	SRAM		15 mm	13 mm	无
GS880F36CGT-6.5I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	GSI技术	SyncBurst	Details	SDR	LQFP, QFP100,.63X.87		FLATPACK, LOW PROFILE	3	256000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	6.5 ns	85 °C	有	GS880F36CGT-6.5I	153 MHz	262144 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	4.9	QFP				有	-	+ 85 C	3.6 V		- 40 C	72	2.3 V	SMD/SMT	Parallel	GSI技术		Tray	GS880F36CGT	e3	有	3A991.B.2.B	流过	纯哑光锡			FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant		R-PQFP-G100	不合格	2.5/3.3 V	INDUSTRIAL	9 Mbit		SYNCHRONOUS		160 mA	6.5 ns				256 k x 36	3-STATE	1.6 mm	36			SRAM		0.045 A	9437184 bit		PARALLEL	COMMON			缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM		20 mm	14 mm
GS8342Q09BD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	N	DDR	Commercial grade							250 MHz	FBGA	QDR	1.8000 V		1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	250 MHz	+ 70 C	1.9 V	0 C		15	0 to 85 °C	Tray	GS8342Q09BD				SigmaQuad-II						Memory & Data Storage														36 Mbit	2			665 mA	450 ps			Pipelined	4 M x 9					21 Bit	SRAM	36 Mbit			Commercial									SRAM