N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

表面贴装

1.9 V

有

250 MHz

+ 70 C

1.9 V

0 C

18

0 to 70 °C

Tray

GS8182D18BGD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

420 mA

Pipelined

1 M x 18

18 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

SDR

QFP,

FLATPACK

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS816136DGT-150

524288 words

2.5 V

QFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

QFP

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS816136DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

512 k x 36

36

SRAM

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

N/A

-

BGA-165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

150 MHz

+ 85 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

0 to 85 °C

GS816132DGD

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

18 Mbit

Commercial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342R18BGD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

600 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

4.2 ns

85 °C

无

GS816236DB-375I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS816236DB

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

1.99 mm

36

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342T37BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

670 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

BGA,

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8162Z36DB-200I

524288 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

有

200 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Tray

GS8162Z36DB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

230 mA

6.5 ns

512 k x 36

1.99 mm

36

SRAM

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

TQFP-100

100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 100 C

2.7 V

- 40 C

18

-40 to 85 °C

Tray

GS8160E36DGT

DCD Synchronous Burst

Memory & Data Storage

18 Mbit

4

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Tray

GS816118DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

170 mA, 180 mA

7.5 ns

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

GSI技术

SigmaQuad-II+

QDR-II

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8672D37BE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2.07 A

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Tray

GS8161E36DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA

6.5 ns

512 k x 36

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

有

400 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182D37BD

SigmaQuad II+

Memory & Data Storage

18 Mbit

670 mA

512 k x 36

SRAM

SRAM

N/A

-

TQFP-100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Tray

GS881E18CGT

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

120 mA, 130 mA

7.5 ns

512 k x 18

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Tray

GS8672T36BGE

SigmaDDR-II

Memory & Data Storage

72 Mbit

1.28 A

2 M x 36

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

有

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182D09BGD

SigmaQuad-II

Memory & Data Storage

18 Mbit

420 mA

2 M x 9

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182D19BD

SigmaQuad II+

Memory & Data Storage

18 Mbit

490 mA

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Tray

GS816132DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA

6.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Tray

GS816118DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA, 230 mA

5.5 ns

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

0 to 85 °C

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Commercial

N/A

-

BGA-165

Details

400 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

QDR-II

有

15

SigmaQuad-II+

1.9 V

Tray

GS8672Q19BGE

SigmaQuad-II+

100 °C

-40 °C

1.8 V

72 Mbit

2

1.38 A

4 M x 18

21 b

72 Mb

72

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342TT07BD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

300 MHz

-40 to 100 °C

Tray

GS8342TT07BD

e0

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

460 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

21

0 to 85 °C

Tray

GS816236DB

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

180 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 100 °C

Tray

GS8162Z18DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

3 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

5.5 ns

85 °C

无

GS8322Z36AD-250I

250 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

-40 to 100 °C

Tray

GS8322Z36AD

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

250 mA, 305 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm