GSI Technology GS816236DB-150
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GS816236DB-150
2984-GS816236DB-150
存储器
BGA-119
大陆
立即发货

Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA119, FPBGA-119
1最小包装量--
GS816236DB-150详情
GSI Technology GS816236DB-150重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
BGA-119
Maximum Clock Rate
133.3@Flow-Through/150@Pipelined MHz
Supplier Package
FBGA
Data Rate Architecture
SDR
Typical Operating Supply Voltage
2.5, 3.3 V
Minimum Operating Supply Voltage
2.3, 3 V
Timing Type
Synchronous
Number of Words
512 kWords
Number of I/O Lines
36 Bit
Maximum Operating Supply Voltage
2.7, 3.6 V
Mounting
表面贴装
Moisture Sensitive
有
Maximum Clock Frequency
150 MHz
Maximum Operating Temperature
+ 70 C
Supply Voltage-Max
3.6 V
Minimum Operating Temperature
0 C
Factory Pack QuantityFactory Pack Quantity
21
Supply Voltage-Min
2.3 V
Mounting Styles
SMD/SMT
Interface Type
Parallel
Manufacturer
GSI技术
Brand
GSI技术
Tradename
SyncBurst
RoHS
N
Memory Types
SDR
Usage Level
Commercial grade
操作温度
0 to 85 °C
系列
GS816236DB
包装
Tray
类型
Pipeline/Flow Through
子类别
Memory & Data Storage
引脚数量
119
内存大小
18 Mbit
端口的数量
4
电源电流-最大值
180 mA, 190 mA
访问时间
7.5 ns
建筑学
Flow-Through/Pipelined
组织结构
512 k x 36
地址总线宽度
19 Bit
产品类别
SRAM
密度
18 Mbit
筛选水平
Commercial
产品类别
SRAM
GS816236DB-150拓展信息
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