N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT11E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

800 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

N

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662T09BD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

590 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662R09BD

SigmaDDR-II B4

Memory & Data Storage

72 Mbit

1

625 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T19E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

895 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

400 MHz

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

400 MHz

+ 70 C

0 to 85 °C

72 Mbit

735 mA

0.45

8 M x 9

72

Commercial

N/A

-

260

714 MHz

BGA

QDR

Synchronous

4 MWords

18 Bit

表面贴装

Commercial grade

0 to 70 °C

1

Pipelined

21 Bit

72 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

165

18 Bit

1.9 V

表面贴装

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662Q18BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

-40 to 100 °C

GS8662Q18BD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

0.73 mA

Pipelined

4MX18

3-STATE

1.4 mm

18

21 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS8642Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

240 mA, 290 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS8160E36DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-119

YES

119

119

表面贴装

+ 85 C

3.6 V

- 40 C

21

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS78132AGB-8I

3.3 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

32 Bit

3.6 V

-40 to 85 °C

GS78132AGB

e1

有

3A991.B.2.B

Asynchronous

锡银铜

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

8 Mbit

4

ASYNCHRONOUS

280 mA

8 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662D19BD-450I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.45

BGA

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS8662D19BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Lead (Sn/Pb)

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

830 mA

Pipelined

4 M x 18

1.4 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

100

165

BGA,

网格排列

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

无

GS881Z32CD-150

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

QFP

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Tray

GS881Z32CD

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

鸥翼

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

256 k x 32

1.4 mm

32

SRAM

8388608 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT07E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

755 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS8644Z36GE

NBT

Memory & Data Storage

72 Mbit

4

270 mA, 345 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

4.5 ns

85 °C

无

GS832218AB-333I

333 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

222@Flow-Through/333@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS832218AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

72 Bit

2, 2.7 V

表面贴装

有

167 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 85 °C

Tray

GS864272GC

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

8

280 mA, 360 mA

8 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 100 °C

Tray

GS8321E36AGD

同步突发

Memory & Data Storage

36 Mbit

4

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Details

DDR

400 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

-40 to 100 °C

Tray

GS8662D08BGD

SigmaQuad-II

Memory & Data Storage

72 Mbit

745 mA

0.45

8 M x 8

SRAM

72

SRAM

N/A

-

8 Weeks

YES

100

100

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS8640Z36GT-167IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.36

QFP

Industrial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

LQFP,

FLATPACK, LOW PROFILE

3

2000000

-40 to 85 °C

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

4

SYNCHRONOUS

Flow-Through/Pipelined

2MX36

1.6 mm

36

21 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

18 Bit

2.7, 3.6 V

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

4.5 ns

70 °C

有

GS880E18CGT-333

333 MHz

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.6

QFP

222.2@Flow-Through/333@Pipelined MHz

TQFP

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

GS880E18CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

SYNCHRONOUS

165 mA, 220 mA

4.5@Flow-Through/2.5

512 k x 18

3-STATE

1.6 mm

18

SRAM

0.025 A

9

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

TQFP-100

100

153.8@Flow-Through/250@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 70 °C

Tray

GS8640E36GT

DCD

Memory & Data Storage

72 Mbit

255 mA, 360 mA

6.5@Flow-Through/3@P

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

165

QDR-II

Commercial grade

357 MHz

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

0 to 85 °C

Tray

GS8662QT19BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

985 mA

0.45

4 M x 18

SRAM

72

Commercial

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

无

GS832272C-200V

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

200 MHz

+ 70 C

0 to 70 °C

GS832272C

无

3A991.B.2.B

FLOW-THROUGH OR PIELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

36 Mbit

8

SYNCHRONOUS

235 mA, 320 mA

7.5 ns

Flow-Through/Pipelined

512 k x 72

1.7 mm

72

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

5 ns

有

GS832018AGT-333IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

Tray

GS832018AGT

3A991.B.2.B

同步突发

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

2

SYNCHRONOUS

265 mA, 350 mA

5 ns

Flow-Through/Pipelined

2 M x 18

1.6 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Industrial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302D08GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

1.005 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM