N/A

-

10 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8161Z36DGD-150IV

BGA

4.78

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 100 °C

Tray

GS8161Z36DGD

3A991.B.2.B

NBT

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8160E36DGT-150

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.78

QFP

有

150 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

Tray

GS8160E36DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

512 k x 36

1.6 mm

36

SRAM

18874368 bit

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA209,11X19,40

未说明

5.5 ns

70 °C

有

GS8642Z72GC-300

300 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.65

BGA

Commercial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

0 to 70 °C

Tray

GS8642Z72GC

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

COMMERCIAL

72 Mbit

8

SYNCHRONOUS

375 mA, 520 mA

5.5 ns

Flow-Through/Pipelined

1 M x 72

3-STATE

1.7 mm

72

20 Bit

SRAM

72 Mbit

0.1 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

12 Weeks

BGA-119

YES

119

119

+ 125 C

3.6 V

- 55 C

2.3 V

SMD/SMT

Parallel

BGA,

网格排列

512000

PLASTIC/EPOXY

-55 °C

未说明

6.5 ns

125 °C

无

GS816236DB-200M

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.13

Military grade

153@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

200 MHz

-55 to 125 °C

GS816236DB

3A991.B.2.B

IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

MILITARY

18 Mbit

4

SYNCHRONOUS

255 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.99 mm

36

19 Bit

18 Mbit

18874368 bit

Military

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302TT20E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1.07 A

450 ps

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342DT38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

905 mA

450 ps

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

0.286216 oz

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

无

GS8321Z36AD-250I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.78

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS8321Z36AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

250 mA, 305 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8321Z36AD-250

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.78

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

250 MHz

+ 70 C

0 to 85 °C

GS8321Z36AD

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

36 Mbit

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342S18BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.9

BGA

Commercial grade

300 MHz

FBGA

DDR

0 to 85 °C

Tray

GS8342S18BGD

3A991.B.2.B

SigmaSIO DDR-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

530 mA

450 ps

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

0.2 A

37748736 bit

Commercial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

有

GS832032AGT-200I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.72

QFP

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 100 °C

Tray

GS832032AGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

1.6 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

TQFP-100

100

表面贴装

3.6 V

Industrial grade

Details

150 MHz

Parallel

2.3 V

- 40 C

+ 85 C

SMD/SMT

SDR

有

72

SyncBurst

150 MHz

TQFP

SDR

3.3000 V

2.97 V

Synchronous

128 kWords

32 Bit

3.63 V

-40 to 85 °C

Tray

GS84032CGT

Pipeline/Flow Through

4 Mbit

1

150 mA, 160 mA

7.5 ns

Flow-Through/Pipelined

128 k x 32

17 Bit

4 MB

Industrial

N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

4.5 ns

70 °C

有

GS816032DGT-333

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.85

QFP

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

0 to 85 °C

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 32

1.6 mm

32

20 Bit

SRAM

18 Mbit

16777216 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS8182Q09BGD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

870 mA

450 ps

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS816136DGT

同步突发

Memory & Data Storage

18 Mbit

4

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

表面贴装

150 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

7.5 ns

85 °C

无

GS832132AD-150I

150 MHz

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.79

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

-40 to 100 °C

3A991.B.2.B

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

15 mm

13 mm

N/A

-

TQFP-100

100

GSI技术

NBT SRAM

Details

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Tray

GS8320Z36AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8342Q36BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

835 mA

450 ps

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

有

GS8160E36DGT-200I

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.9

QFP

有

200 MHz

+ 100 C

3.6 V

0.344551 oz

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS8160E36DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

18 Mbit

SYNCHRONOUS

230 mA

6.5 ns

512 k x 36

1.6 mm

36

SRAM

18874368 bit

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

12 Weeks

BGA-119

YES

119

119

2.7, 3.6 V

有

250 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS864236B-250

2097152 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.76

BGA

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

0 to 70 °C

Tray

GS864236B

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

72 Mbit

SYNCHRONOUS

255 mA, 360 mA

6.5@Flow-Through/2.5

2 M x 36

1.99 mm

36

SRAM

72

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

表面贴装

1.9 V

Commercial grade

Details

550 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

DDR

有

10

SigmaDDR-II+

0.892167 oz

550 MHz

FPBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

1.9 V

0 to 85 °C

Tray

GS82582TT20GE

SigmaDDR-II+

288 Mbit

980 mA

450 ps

Pipelined

16 M x 18

288 Mbit

Commercial

N/A

-

BGA-260

Details

625 MHz

Parallel

1.25 V

- 40 C

+ 100 C

SMD/SMT

DDR-III

有

10

SigmaDDR-IIIe

1.35 V

Tray

GS82583ET36GK

SigmaDDR-IIIe B2

288 Mbit

1 A

400 ps

8 M x 36

N/A

-

12 Weeks

BGA-260

YES

260

未说明

0.4 ns

无

GS8673ET36BK-625I

2097152 words

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.82

有

625 MHz

+ 100 C

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

Tray

GS8673ET36BK

3A991.B.2.B

SigmaDDR-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.23 A

2 M x 36

2.3 mm

36

SRAM

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

264 In Stock

-

5 Weeks, 1 Day

YES

44

44

Compliant

SRAM

TSOP2,

SMALL OUTLINE, THIN PROFILE

TSOP2

5.11

GSI TECHNOLOGY

不推荐

GSI技术

RECTANGULAR

TSOP2

3.3 V

524288 words

GS74108AGP-10I

有

85 °C

10 ns

未说明

-40 °C

PLASTIC/EPOXY

512000

3

e3

有

SMD/SMT

3A991.B.2.B

纯哑光锡

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

512 kB

1

ASYNCHRONOUS

10 ns

512KX8

1.2 mm

8

19 b

4 Mb

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

无

无SVHC

N/A

-

YES

165

165

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8342Q36AGE-250I

1048576 words

1.8 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.72

BGA

BGA,

网格排列

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

1MX36

1.5 mm

36

37748736 bit

PARALLEL

DDR SRAM

1.95 V

1.7 V

17 mm

15 mm

N/A

-

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

12 ns

70 °C

有

GS84036AGT-100

100 MHz

131072 words

3.3 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.66

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

SYNCHRONOUS

0.19 mA

128KX36

3-STATE

1.6 mm

36

0.02 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm