N/A

-

YES

100

100

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8160E18BGT-200

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.7

QFP

LQFP,

FLATPACK, LOW PROFILE

3

1000000

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

SYNCHRONOUS

1MX18

1.6 mm

18

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

12 Weeks

BGA-260

YES

260

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

无

GS8673EQ36BK-625

2097152 words

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.8

有

625 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

N

QDR-III

HBGA,

Tray

GS8673EQ36BK

3A991.B.2.B

SigmaQuad-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

2.97 A

2 M x 36

2.3 mm

36

SRAM

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 100 C

3.6 V

0.216306 oz

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS816036DGT-200I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.72

QFP

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

-40 to 100 °C

Tray

GS816036DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

YES

100

100

PLASTIC/EPOXY

未说明

8.5 ns

70 °C

无

GS8320Z18T-150

2097152 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.71

QFP

LQFP,

FLATPACK, LOW PROFILE

3

2000000

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

SYNCHRONOUS

2MX18

1.6 mm

18

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

YES

100

100

QFP

5.69

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

LQFP

2.5 V

524288 words

150 MHz

GS816032BGT-150I

有

85 °C

7.5 ns

未说明

-40 °C

QFP100,.63X.87

PLASTIC/EPOXY

512000

3

FLATPACK, LOW PROFILE

LQFP, QFP100,.63X.87

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

SYNCHRONOUS

0.215 mA

512KX32

3-STATE

1.6 mm

32

16777216 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

YES

165

165

PLASTIC/EPOXY

未说明

7 ns

70 °C

有

GS8322Z18GE-225

2097152 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.62

BGA

15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GRID ARRAY, LOW PROFILE

3

2000000

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

2MX18

1.4 mm

18

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

17 mm

15 mm

N/A

-

BGA-165

YES

165

RECTANGULAR

LBGA

1.8 V

8388608 words

GS81302DT20AGD-633I

有

100 °C

0.45 ns

未说明

-40 °C

PLASTIC/EPOXY

8000000

Details

633 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

QDR

10

SigmaQuad-II+

1.9 V

LBGA,

GRID ARRAY, LOW PROFILE

5.75

GSI TECHNOLOGY

活跃

GS81302DT20AGD

SigmaQuad-II+

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

144 Mbit

SYNCHRONOUS

1.15 A

8 M x 18

1.4 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

,

有

GS81302D11GE-333I

GSI技术

活跃

GSI TECHNOLOGY

5.8

compliant

N/A

-

TQFP-100

SDR

有

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

Tray

GS8640FZ36GT

NBT

Memory & Data Storage

72 Mbit

250 mA

7.5 ns

2 M x 36

SRAM

SRAM

N/A

-

YES

165

165

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662Q18E-250I

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.74

BGA

15 X 17 MM, 1 MM PITCH, FPBGA-165

GRID ARRAY, LOW PROFILE

无

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

4MX18

1.5 mm

18

75497472 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

YES

165

165

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

有

GS832136GE-166I

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.64

BGA

LBGA,

GRID ARRAY, LOW PROFILE

e1

有

3A991.B.2.B

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

SYNCHRONOUS

1MX36

1.5 mm

36

37748736 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

17 mm

15 mm

N/A

-

25 Weeks, 5 Days

YES

119

119

12 ns

70 °C

有

GS78108AGB-12

1048576 words

3.3 V

BGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

5.24

BGA

BGA,

网格排列

3

1000000

PLASTIC/EPOXY

未说明

e1

有

3A991.B.2.B

锡银铜

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

ASYNCHRONOUS

1MX8

1.99 mm

8

8388608 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

6 Weeks

YES

44

44

PLASTIC/EPOXY

-40 °C

未说明

10 ns

85 °C

有

GS74104AGP-10I

1048576 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.33

TSOP2

TSOP2,

SMALL OUTLINE, THIN PROFILE

3

1000000

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

ASYNCHRONOUS

1MX4

1.2 mm

4

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

8 Weeks

YES

209

209

1.8 ns

70 °C

无

GS8170LW72AC-300

262144 words

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.22

BGA

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

无

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

SYNCHRONOUS

256KX72

1.7 mm

72

18874368 bit

PARALLEL

标准SRAM

1.95 V

1.7 V

22 mm

14 mm

N/A

-

25 Weeks, 5 Days

YES

119

119

8 ns

70 °C

无

GS76024AB-8

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.24

BGA

BGA,

网格排列

3

256000

PLASTIC/EPOXY

未说明

e0

无

3A991.B.2.B

锡铅

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

ASYNCHRONOUS

256KX24

1.99 mm

24

6291456 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

YES

100

100

3

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8161Z36BGT-150I

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.61

QFP

ROHS COMPLIANT, TQFP-100

FLATPACK, LOW PROFILE

有

3A991.B.2.B

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

SYNCHRONOUS

512KX36

1.6 mm

36

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

12 Weeks

BGA-260

YES

260

未说明

0.4 ns

无

GS8673EQ36BK-500I

2097152 words

1.3 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.8

有

500 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

QDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

Tray

GS8673EQ36BK

3A991.B.2.B

SigmaQuad-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.44 A

2 M x 36

2.3 mm

36

SRAM

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

BGA-260

DDR

有

550 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Tray

GS8673ED36BK

SigmaQuad-IIIe B4

Memory & Data Storage

72 Mbit

2.67 A

2 M x 36

SRAM

SRAM

N/A

-

BGA-260

GSI技术

SigmaQuad-IIIe

N

QDR-III

有

550 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

Tray

GS8673EQ18BK

SigmaQuad-IIIe B2

Memory & Data Storage

72 Mbit

1.93 A

4 M x 18

SRAM

SRAM

N/A

-

BGA-260

YES

260

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

675 MHz

Parallel

1.2 V

- 40 C

+ 100 C

SMD/SMT

DDR

有

10

SigmaDDR-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

GS81313LT18GK-675I

8388608 words

1.25 V

HBGA

Tray

GS81313LT18GK

3A991.B.2.B

SigmaDDR-IIIe B2

IT ALSO OPERATES AT 1.15 TO 1.3 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

12 Weeks

BGA-260

YES

260

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

无

GS8673EQ36BK-675

2097152 words

1.35 V

HBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.8

有

675 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

N

QDR-III

HBGA,

Tray

GS8673EQ36BK

3A991.B.2.B

SigmaQuad-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

3.17 A

2 M x 36

2.3 mm

36

SRAM

75497472 bit

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

YES

209

209

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA209,11X19,40

-40 °C

未说明

7.5 ns

85 °C

有

GS8642Z72GC-200I

200 MHz

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.18

BGA

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

INDUSTRIAL

SYNCHRONOUS

0.405 mA

1MX72

3-STATE

1.7 mm

72

0.12 A

75497472 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

22 mm

14 mm

N/A

-

25 Weeks, 5 Days

YES

119

119

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS76024AB-8I

262144 words

3.3 V

BGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.24

BGA

BGA,

网格排列

3

256000

e0

无

3A991.B.2.B

锡铅

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

ASYNCHRONOUS

256KX24

1.99 mm

24

6291456 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

12 Weeks

YES

119

119

5.24

GSI TECHNOLOGY

生命周期结束

GSI技术

RECTANGULAR

BGA

3.3 V

1048576 words

GS78108AGB-10

有

70 °C

10 ns

未说明

BGA,

网格排列

3

1000000

PLASTIC/EPOXY

BGA

e1

有

3A991.B.2.B

锡银铜

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

ASYNCHRONOUS

1MX8

1.99 mm

8

8388608 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

YES

119

119

PLASTIC/EPOXY

未说明

8.5 ns

70 °C

无

GS8322Z36B-133

1048576 words

2.5 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.64

BGA

14 X 22 MM, 1.27 MM PITCH, FPBGA-119

网格排列

3

1000000

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

SYNCHRONOUS

1MX36

1.99 mm

36

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

22 mm

14 mm