品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 表面安装 | 引脚数 | 终端数量 | JESD-609代码 | 无铅代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 温度等级 | 端口的数量 | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | I/O类型 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 长度 | 宽度 | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IDT6167SA70D | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 20 | 16384 words | 16000 | 70 °C | CERAMIC | DIP | DIP20,.3 | RECTANGULAR | IN-LINE | 5 V | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 70 ns | e0 | 无 | EAR99 | 锡铅 | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T20 | 不合格 | COMMERCIAL | ASYNCHRONOUS | 16KX1 | 3-STATE | 1 | 16384 bit | PARALLEL | SEPARATE | 标准SRAM | |||||||||||||||||||||||
![]() | IDT71V321L35TFI | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | INTEGRATED DEVICE TECHNOLOGY INC | 35 ns | 3 | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP64,.47SQ,20 | SQUARE | FLATPACK | 3.3 V | 无 | Obsolete | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.41 | QUAD | 鸥翼 | 240 | 0.5 mm | not_compliant | 30 | S-PQFP-G64 | 不合格 | INDUSTRIAL | 2 | ASYNCHRONOUS | 0.095 mA | 2KX8 | 3-STATE | 8 | 0.004 A | 16384 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | |||||||||||||||
![]() | IDT7187L25DB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 22 | 22 | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.300 INCH, CERAMIC, DIP-22 | 25 ns | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP22,.3 | RECTANGULAR | IN-LINE | 5 V | 无 | Obsolete | e0 | 3A001.A.2.C | 锡铅 | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-GDIP-T22 | 不合格 | MILITARY | 1 | ASYNCHRONOUS | 0.11 mA | 64KX1 | 3-STATE | 5.08 mm | 1 | 0.0006 A | 65536 bit | MIL-STD-883 Class B | PARALLEL | SEPARATE | 标准SRAM | 2 V | 5.5 V | 4.5 V | NO | 27.051 mm | 7.62 mm | ||||||||
![]() | IDT7198S35DB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 24 | 24 | DIP24,.3 | RECTANGULAR | IN-LINE | 5 V | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.300 INCH, CERDIP-24 | 35 ns | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-GDIP-T24 | 不合格 | MILITARY | 1 | ASYNCHRONOUS | 0.14 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.02 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | 标准SRAM | 4.5 V | 5.5 V | 4.5 V | YES | 32.004 mm | 7.62 mm | ||||||||
![]() | IDT7005S55JB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 68 | 68 | 1 | 8192 words | 8000 | 125 °C | -55 °C | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | 无 | Transferred | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 5 V | 55 ns | e0 | 无 | 3A001.A.2.C | 锡铅 | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 20 | S-PQCC-J68 | 不合格 | MILITARY | 2 | ASYNCHRONOUS | 0.3 mA | 8KX8 | 3-STATE | 4.572 mm | 8 | 0.03 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | 5.5 V | 4.5 V | 24.2062 mm | 24.2062 mm | ||||||
![]() | IDT70V3399S133BFG | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 208 | 208 | Transferred | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LFBGA, BGA208,17X17,32 | 4.2 ns | 133 MHz | 3 | 131072 words | 128000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | LFBGA | BGA208,17X17,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | 3.3 V | 有 | e1 | 有 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 30 | S-CBGA-B208 | 不合格 | COMMERCIAL | 2 | SYNCHRONOUS | 0.4 mA | 128KX18 | 3-STATE | 1.7 mm | 18 | 0.03 A | 2359296 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3.15 V | 3.45 V | 3.15 V | 15 mm | 15 mm | |||||
![]() | IDT7130SA45L52 | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 52 | 52 | LCC | QCCN, LCC52,.75SQ | 45 ns | 1024 words | 1000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC52,.75SQ | SQUARE | CHIP CARRIER | 5 V | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | e0 | 无 | EAR99 | 锡铅 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | 无铅 | 1 | 1.27 mm | not_compliant | S-CQCC-N52 | 不合格 | COMMERCIAL | 2 | ASYNCHRONOUS | 0.19 mA | 1KX8 | 3-STATE | 2.2098 mm | 8 | 0.015 A | 8192 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | 5.5 V | 4.5 V | YES | 19.05 mm | 19.05 mm | ||||||||
![]() | IDT7005L20JB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 68 | 68 | Transferred | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC68,1.0SQ | 20 ns | 1 | 8192 words | 8000 | 125 °C | -55 °C | PLASTIC/EPOXY | QCCJ | LDCC68,1.0SQ | SQUARE | CHIP CARRIER | 5 V | 无 | e0 | 无 | 3A001.A.2.C | 锡铅 | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 20 | S-PQCC-J68 | 不合格 | MILITARY | 2 | ASYNCHRONOUS | 0.32 mA | 8KX8 | 3-STATE | 4.572 mm | 8 | 0.004 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | 5.5 V | 4.5 V | 24.2062 mm | 24.2062 mm | ||||||
![]() | IDT8M824S45CB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 32 | 45 ns | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP32,.6 | RECTANGULAR | 微电子组件 | 5 V | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | e0 | 3A001.A.2.C | 锡铅 | TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-CDMA-T32 | 不合格 | MILITARY | ASYNCHRONOUS | 0.265 mA | 128KX8 | 3-STATE | 8 | 0.08 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | SRAM MODULE | 4.5 V | 5.5 V | 4.5 V | |||||||||||||||
![]() | IDT70T3519S133BCG | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 256 | 256 | 262144 words | 有 | Transferred | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 15 ns | 133 MHz | 256000 | 70 °C | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | 2.5 V | 3 | e1 | 有 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 30 | S-PBGA-B256 | 不合格 | COMMERCIAL | 2 | SYNCHRONOUS | 0.37 mA | 256KX36 | 3-STATE | 1.7 mm | 36 | 0.015 A | 9437184 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 2.4 V | 2.6 V | 2.4 V | 17 mm | 17 mm | |||||
![]() | 5962-8700206ZC | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 48 | 90 ns | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | IN-LINE | 5 V | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, | e0 | 3A001.A.2.C | 锡铅 | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | unknown | 不合格 | MILITARY | ASYNCHRONOUS | 2KX8 | 8 | 16384 bit | PARALLEL | MULTI-PORT SRAM | 5.5 V | 4.5 V | |||||||||||||||||||||||||
![]() | IDT6198S25Y | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 24 | 24 | INTEGRATED DEVICE TECHNOLOGY INC | SOJ | 0.300 INCH, SOJ-24 | 25 ns | 3 | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ24,.34 | RECTANGULAR | 小概要 | 5 V | 无 | Obsolete | e0 | EAR99 | 锡铅 | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | 30 | R-PDSO-J24 | 不合格 | COMMERCIAL | 1 | ASYNCHRONOUS | 0.125 mA | 16KX4 | 3-STATE | 3.76 mm | 4 | 0.015 A | 65536 bit | PARALLEL | COMMON | 标准SRAM | 4.5 V | 5.5 V | 4.5 V | YES | 15.88 mm | 7.62 mm | |||||||
![]() | IDT7187L55CB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 22 | 22 | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP22,.3 | 55 ns | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP22,.3 | RECTANGULAR | IN-LINE | 5 V | 无 | Obsolete | e0 | 无 | 3A001.A.2.C | 锡铅 | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-CDIP-T22 | 不合格 | MILITARY | 1 | ASYNCHRONOUS | 0.095 mA | 64KX1 | 3-STATE | 5.08 mm | 1 | 0.0006 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | SEPARATE | 标准SRAM | 2 V | 5.5 V | 4.5 V | NO | 27.432 mm | 7.62 mm | |||||||
![]() | IDT8M624S45CB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 40 | 45 ns | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP40,.6 | RECTANGULAR | 微电子组件 | 5 V | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | e0 | 3A001.A.2.C | 锡铅 | TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-CDMA-T40 | 不合格 | MILITARY | ASYNCHRONOUS | 0.34 mA | 64KX16 | 3-STATE | 16 | 0.08 A | 1048576 bit | MIL-STD-883 Class B (Modified) | PARALLEL | COMMON | SRAM MODULE | 4.5 V | 5.5 V | 4.5 V | |||||||||||||||
![]() | IDT70P257L55BYGI8 | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 100 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | BGA | 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, BGA-100 | 55 ns | 3 | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA100,10X10,20 | SQUARE | 网格排列 | 1.8 V | 有 | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 30 | S-PBGA-B100 | 不合格 | INDUSTRIAL | 2 | ASYNCHRONOUS | 0.025 mA | 8KX16 | 3-STATE | 16 | 0.000008 A | 131072 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 1.7 V | 1.9 V | 1.7 V | ||||||||||
![]() | IDT7164L45L28 | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | 28 | QLCC | LCC-28 | 45 ns | 8192 words | 8000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC28,.45SQ | SQUARE | CHIP CARRIER | 5 V | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | e0 | 无 | EAR99 | 锡铅 | 8542.32.00.41 | QUAD | 无铅 | 1 | 1.27 mm | not_compliant | S-CQCC-N28 | 不合格 | COMMERCIAL | 1 | ASYNCHRONOUS | 0.12 mA | 8KX8 | 3-STATE | 2.54 mm | 8 | 0.00006 A | 65536 bit | PARALLEL | COMMON | 标准SRAM | 2 V | 5.5 V | 4.5 V | YES | 11.43 mm | 11.43 mm | |||||||||
![]() | IDT8M624S60CB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 40 | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP40,.6 | RECTANGULAR | 微电子组件 | 5 V | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 60 ns | 65536 words | 64000 | 125 °C | e0 | 3A001.A.2.C | 锡铅 | TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-CDMA-T40 | 不合格 | MILITARY | ASYNCHRONOUS | 0.34 mA | 64KX16 | 3-STATE | 16 | 0.08 A | 1048576 bit | MIL-STD-883 Class B (Modified) | PARALLEL | COMMON | SRAM MODULE | 4.5 V | 5.5 V | 4.5 V | |||||||||||||||
![]() | IDT7165L35J | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | 32 | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | PLASTIC, LCC-32 | 35 ns | 1 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 5 V | 无 | Obsolete | e0 | EAR99 | 锡铅 | 8542.32.00.41 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 20 | R-PQCC-J32 | 不合格 | COMMERCIAL | 1 | ASYNCHRONOUS | 0.13 mA | 8KX8 | 3-STATE | 3.55 mm | 8 | 0.00006 A | 65536 bit | PARALLEL | COMMON | 标准SRAM | 2 V | 5.5 V | 4.5 V | YES | 13.97 mm | 11.43 mm | |||||||
![]() | IDT7005S20PFB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | 64 | QFP | LQFP, QFP64,.66SQ,32 | 20 ns | Obsolete | 无 | 5 V | FLATPACK, LOW PROFILE | SQUARE | QFP64,.66SQ,32 | LQFP | PLASTIC/EPOXY | -55 °C | 125 °C | 8000 | 8192 words | 3 | INTEGRATED DEVICE TECHNOLOGY INC | e0 | 无 | 3A001.A.2.C | 锡铅 | 8542.32.00.41 | QUAD | 鸥翼 | 240 | 1 | 0.8 mm | not_compliant | 30 | S-PQFP-G64 | 不合格 | MILITARY | 2 | ASYNCHRONOUS | 0.37 mA | 8KX8 | 3-STATE | 1.6 mm | 8 | 0.03 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | 5.5 V | 4.5 V | 14 mm | 14 mm | ||||||
![]() | IDT6116SA20PGI | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 24 | 24 | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.600 INCH, PLASTIC, DIP-24 | 19 ns | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | 5 V | 有 | Obsolete | e3 | EAR99 | 哑光锡 | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T24 | 不合格 | INDUSTRIAL | ASYNCHRONOUS | 0.105 mA | 2KX8 | 3-STATE | 4.699 mm | 8 | 0.002 A | 16384 bit | PARALLEL | COMMON | 标准SRAM | 4.5 V | 5.5 V | 4.5 V | 31.75 mm | 15.24 mm | |||||||||||
![]() | IDT70V7288L25PF | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 100 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 | 25 ns | 3 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | LFQFP | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | 3.3 V | 无 | e0 | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.41 | QUAD | 鸥翼 | 240 | 1 | 0.5 mm | not_compliant | 20 | S-PQFP-G100 | 不合格 | COMMERCIAL | 2 | ASYNCHRONOUS | 0.2 mA | 64KX16 | 3-STATE | 1.6 mm | 16 | 0.003 A | 1048576 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3.14 V | 3.465 V | 3.135 V | 14 mm | 14 mm | ||||||||
![]() | IDT7198L20D | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 24 | 24 | DIP | 0.300 INCH, CERDIP-24 | 19 ns | 16384 words | 16000 | 70 °C | CERAMIC, GLASS-SEALED | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | 5 V | 无 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | e0 | 无 | EAR99 | 锡铅 | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-GDIP-T24 | 不合格 | COMMERCIAL | 1 | ASYNCHRONOUS | 0.115 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.00015 A | 65536 bit | PARALLEL | COMMON | 标准SRAM | 2 V | 5.5 V | 4.5 V | YES | 32.004 mm | 7.62 mm | |||||||||
![]() | IDT7026L20GB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | 84 | INTEGRATED DEVICE TECHNOLOGY INC | PGA | PGA, PGA84M,11X11 | 20 ns | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | PGA | PGA84M,11X11 | SQUARE | 网格排列 | 5 V | 无 | Transferred | e0 | 无 | 3A001.A.2.C | 锡铅 | 16K X 16 DUAL PORT SRAM | 8542.32.00.41 | PERPENDICULAR | PIN/PEG | 1 | 2.54 mm | not_compliant | S-CPGA-P84 | 不合格 | MILITARY | 2 | ASYNCHRONOUS | 0.315 mA | 16KX16 | 3-STATE | 5.207 mm | 16 | 0.01 A | 262144 bit | MIL-PRF-38535 | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | 5.5 V | 4.5 V | 27.94 mm | 27.94 mm | |||||||
![]() | 70V3389S6BFG | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 208 | 208 | Transferred | INTEGRATED DEVICE TECHNOLOGY INC | BGA | TFBGA, BGA208,17X17,32 | 6 ns | 83 MHz | 3 | 65536 words | 64000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | TFBGA | BGA208,17X17,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | 3.3 V | 有 | e1 | 有 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 30 | S-CBGA-B208 | 不合格 | COMMERCIAL | 2 | SYNCHRONOUS | 0.31 mA | 64KX18 | 3-STATE | 1.2 mm | 18 | 0.015 A | 1179648 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3.15 V | 3.45 V | 3.15 V | 15 mm | 15 mm | |||||
![]() | IDT70V24L25PFG | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 100 | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LFQFP, QFP100,.63SQ,20 | 25 ns | 3 | 4096 words | 4000 | 70 °C | PLASTIC/EPOXY | LFQFP | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | 3.3 V | 有 | Transferred | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | QUAD | 鸥翼 | 260 | 1 | 0.5 mm | compliant | 30 | S-PQFP-G100 | 不合格 | COMMERCIAL | 2 | ASYNCHRONOUS | 0.165 mA | 4KX16 | 3-STATE | 1.6 mm | 16 | 0.0025 A | 65536 bit | PARALLEL | COMMON | MULTI-PORT SRAM | 3 V | 3.6 V | 3 V | 14 mm | 14 mm |
IDT6167SA70D
Integrated Device Technology Inc
分类:Memory
IDT71V321L35TFI
Integrated Device Technology Inc
分类:Memory
IDT7187L25DB
Integrated Device Technology Inc
分类:Memory
IDT7198S35DB
Integrated Device Technology Inc
分类:Memory
IDT7005S55JB
Integrated Device Technology Inc
分类:Memory
IDT70V3399S133BFG
Integrated Device Technology Inc
分类:Memory
IDT7130SA45L52
Integrated Device Technology Inc
分类:Memory
IDT7005L20JB
Integrated Device Technology Inc
分类:Memory
IDT8M824S45CB
Integrated Device Technology Inc
分类:Memory
IDT70T3519S133BCG
Integrated Device Technology Inc
分类:Memory
5962-8700206ZC
Integrated Device Technology Inc
分类:Memory
IDT6198S25Y
Integrated Device Technology Inc
分类:Memory
IDT7187L55CB
Integrated Device Technology Inc
分类:Memory
IDT8M624S45CB
Integrated Device Technology Inc
分类:Memory
IDT70P257L55BYGI8
Integrated Device Technology Inc
分类:Memory
IDT7164L45L28
Integrated Device Technology Inc
分类:Memory
IDT8M624S60CB
Integrated Device Technology Inc
分类:Memory
IDT7165L35J
Integrated Device Technology Inc
分类:Memory
IDT7005S20PFB
Integrated Device Technology Inc
分类:Memory
IDT6116SA20PGI
Integrated Device Technology Inc
分类:Memory
IDT70V7288L25PF
Integrated Device Technology Inc
分类:Memory
IDT7198L20D
Integrated Device Technology Inc
分类:Memory
IDT7026L20GB
Integrated Device Technology Inc
分类:Memory
70V3389S6BFG
Integrated Device Technology Inc
分类:Memory
IDT70V24L25PFG
Integrated Device Technology Inc
分类:Memory
