N/A

-

YES

52

52

Transferred

INTEGRATED DEVICE TECHNOLOGY INC

LCC

QCCJ, LDCC52,.8SQ

20 ns

1

1024 words

1000

70 °C

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

5 V

有

e3

有

EAR99

Matte Tin (Sn) - annealed

8542.32.00.41

QUAD

J BEND

260

1

1.27 mm

compliant

30

S-PQCC-J52

不合格

COMMERCIAL

2

ASYNCHRONOUS

0.25 mA

1KX8

3-STATE

4.572 mm

8

0.015 A

8192 bit

PARALLEL

COMMON

MULTI-PORT SRAM

4.5 V

5.5 V

4.5 V

19.1262 mm

19.1262 mm

N/A

-

NO

28

28

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP,

25 ns

32768 words

32000

85 °C

-40 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

5 V

无

Obsolete

e0

EAR99

锡铅

8542.32.00.41

DUAL

THROUGH-HOLE

1

2.54 mm

compliant

R-PDIP-T28

不合格

INDUSTRIAL

ASYNCHRONOUS

32KX8

4.699 mm

8

262144 bit

PARALLEL

标准SRAM

5.5 V

4.5 V

36.576 mm

15.24 mm

N/A

-

YES

100

100

-40 °C

PLASTIC/EPOXY

LFQFP

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

3.3 V

无

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

QFP

14 X 14 MM, 1.40 MM HEIGHT, TQFP-100

25 ns

3

32768 words

32000

85 °C

e0

无

EAR99

Tin/Lead (Sn/Pb)

8542.32.00.41

QUAD

鸥翼

未说明

1

0.5 mm

compliant

未说明

S-PQFP-G100

不合格

INDUSTRIAL

ASYNCHRONOUS

32KX16

1.6 mm

16

524288 bit

PARALLEL

MULTI-PORT SRAM

3.6 V

3 V

14 mm

14 mm

N/A

-

NO

48

48

55 ns

2048 words

有

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

2000

70 °C

PLASTIC/EPOXY

DIP

DIP48,.6

RECTANGULAR

IN-LINE

5 V

DIP

DIP, DIP48,.6

e3

有

EAR99

哑光锡

自动断电

8542.32.00.41

DUAL

THROUGH-HOLE

1

2.54 mm

compliant

R-PDIP-T48

不合格

COMMERCIAL

2

ASYNCHRONOUS

0.155 mA

2KX8

3-STATE

5.08 mm

8

0.015 A

16384 bit

PARALLEL

COMMON

MULTI-PORT SRAM

4.5 V

5.5 V

4.5 V

61.849 mm

15.24 mm

N/A

-

YES

52

52

5 V

CHIP CARRIER

SQUARE

LDCC52,.8SQ

QCCJ

PLASTIC/EPOXY

-40 °C

85 °C

1000

1024 words

1

25 ns

QCCJ, LDCC52,.8SQ

LCC

INTEGRATED DEVICE TECHNOLOGY INC

Obsolete

有

e3

有

EAR99

Matte Tin (Sn) - annealed

8542.32.00.41

QUAD

J BEND

260

1

1.27 mm

compliant

30

S-PQCC-J52

不合格

INDUSTRIAL

2

ASYNCHRONOUS

0.22 mA

1KX8

3-STATE

8

0.03 A

8192 bit

PARALLEL

COMMON

MULTI-PORT SRAM

4.5 V

5.5 V

4.5 V

N/A

-

NO

28

28

8192 words

25 ns

0.300 INCH, THIN, SIDE BRAZED, DIP-28

DIP

INTEGRATED DEVICE TECHNOLOGY INC

Obsolete

无

5 V

IN-LINE

RECTANGULAR

DIP28,.3

DIP

CERAMIC, METAL-SEALED COFIRED

70 °C

8000

e0

无

EAR99

锡铅

8542.32.00.41

DUAL

THROUGH-HOLE

1

2.54 mm

not_compliant

R-CDIP-T28

不合格

COMMERCIAL

1

ASYNCHRONOUS

0.15 mA

8KX8

3-STATE

5.08 mm

8

0.00006 A

65536 bit

PARALLEL

COMMON

标准SRAM

2 V

5.5 V

4.5 V

YES

35.56 mm

7.62 mm

N/A

-

YES

100

100

无

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

QFP

14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100

4.2 ns

133 MHz

3

131072 words

128000

70 °C

-40 °C

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

3.3 V

e0

3A991.B.2.A

锡铅

流水线结构

8542.32.00.41

QUAD

鸥翼

225

1

0.65 mm

not_compliant

20

R-PQFP-G100

不合格

OTHER

SYNCHRONOUS

0.3 mA

128KX36

3-STATE

1.6 mm

36

0.04 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

3.14 V

3.465 V

3.135 V

20 mm

14 mm

N/A

-

YES

24

24

无

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

LCC

LCC-24

35 ns

2048 words

2000

125 °C

-55 °C

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC24,.3X.4

RECTANGULAR

CHIP CARRIER

5 V

e0

无

3A001.A.2.C

锡铅

8542.32.00.41

QUAD

无铅

1

1.27 mm

not_compliant

R-CQCC-N24

不合格

MILITARY

1

ASYNCHRONOUS

0.105 mA

2KX8

3-STATE

3.048 mm

8

0.0002 A

16384 bit

38535Q/M;38534H;883B

PARALLEL

COMMON

标准SRAM

2 V

5.5 V

4.5 V

YES

10.16 mm

7.62 mm

N/A

-

YES

24

24

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

SOJ

0.300 INCH, SOJ-24

20 ns

3

4096 words

4000

70 °C

PLASTIC/EPOXY

SOJ

SOJ24,.34

RECTANGULAR

小概要

5 V

无

e0

EAR99

锡铅

8542.32.00.41

DUAL

J BEND

225

1

1.27 mm

not_compliant

30

R-PDSO-J24

不合格

COMMERCIAL

1

ASYNCHRONOUS

0.1 mA

4KX4

3-STATE

3.76 mm

4

0.00002 A

16384 bit

PARALLEL

COMMON

标准SRAM

2 V

5.5 V

4.5 V

YES

15.88 mm

7.62 mm

N/A

-

YES

32

32

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

QFJ

QCCJ, LDCC32,.5X.6

55 ns

1

32768 words

32000

70 °C

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

5 V

无

e0

EAR99

锡铅

8542.32.00.41

QUAD

J BEND

225

1

1.27 mm

not_compliant

20

R-PQCC-J32

不合格

COMMERCIAL

1

ASYNCHRONOUS

0.105 mA

32KX8

3-STATE

3.55 mm

8

0.00012 A

262144 bit

PARALLEL

COMMON

标准SRAM

2 V

5.5 V

4.5 V

YES

13.97 mm

11.43 mm

N/A

-

YES

100

100

无

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

QFP

LFQFP, QFP100,.63SQ,20

20 ns

3

8192 words

8000

85 °C

-40 °C

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

3.3 V

e0

无

EAR99

Tin/Lead (Sn85Pb15)

8542.32.00.41

QUAD

鸥翼

240

1

0.5 mm

not_compliant

20

S-PQFP-G100

不合格

INDUSTRIAL

2

ASYNCHRONOUS

0.225 mA

8KX16

3-STATE

1.6 mm

16

0.015 A

131072 bit

PARALLEL

COMMON

MULTI-PORT SRAM

3 V

3.6 V

3 V

14 mm

14 mm

N/A

-

NO

48

48

70 °C

CERAMIC, METAL-SEALED COFIRED

DIP

DIP48,.6

RECTANGULAR

IN-LINE

5 V

无

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48

45 ns

2048 words

2000

e0

无

EAR99

锡铅

AUTOMATIC POWER-DOWN

8542.32.00.41

DUAL

THROUGH-HOLE

1

2.54 mm

not_compliant

R-CDIP-T48

不合格

COMMERCIAL

2

ASYNCHRONOUS

0.145 mA

2KX8

3-STATE

4.826 mm

8

0.0015 A

16384 bit

MIL-STD-883 Class B (Modified)

PARALLEL

COMMON

MULTI-PORT SRAM

2 V

5.5 V

4.5 V

YES

60.96 mm

15.24 mm

N/A

-

YES

28

28

INTEGRATED DEVICE TECHNOLOGY INC

QLCC

LCC-28

29 ns

8192 words

8000

70 °C

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC28,.45SQ

SQUARE

CHIP CARRIER

5 V

无

Obsolete

e0

无

EAR99

锡铅

8542.32.00.41

QUAD

无铅

1

1.27 mm

not_compliant

S-CQCC-N28

不合格

COMMERCIAL

1

ASYNCHRONOUS

0.14 mA

8KX8

3-STATE

2.54 mm

8

0.00006 A

65536 bit

PARALLEL

COMMON

标准SRAM

2 V

5.5 V

4.5 V

YES

11.43 mm

11.43 mm

N/A

-

NO

32

INTEGRATED DEVICE TECHNOLOGY INC

55 ns

524288 words

512000

125 °C

-55 °C

UNSPECIFIED

DIP

DIP32,.6

RECTANGULAR

微电子组件

5 V

无

Obsolete

e0

3A001.A.2.C

锡铅

8542.32.00.41

DUAL

THROUGH-HOLE

1

2.54 mm

not_compliant

R-XDMA-T32

不合格

MILITARY

1

ASYNCHRONOUS

0.24 mA

512KX8

3-STATE

8

0.06 A

4194304 bit

MIL-STD-883 Class B (Modified)

PARALLEL

COMMON

SRAM MODULE

4.5 V

5.5 V

4.5 V

YES

N/A

-

YES

68

68

无

Obsolete

INTEGRATED DEVICE TECHNOLOGY INC

LCC

PLASTIC, LCC-68

35 ns

1

2048 words

2000

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

LDCC68,1.0SQ

SQUARE

CHIP CARRIER

5 V

e0

无

EAR99

锡铅

8542.32.00.41

QUAD

J BEND

225

1

1.27 mm

not_compliant

20

S-PQCC-J68

不合格

INDUSTRIAL

2

ASYNCHRONOUS

0.295 mA

2KX16

3-STATE

4.57 mm

16

0.004 A

32768 bit

PARALLEL

COMMON

MULTI-PORT SRAM

2 V

5.5 V

4.5 V

24.2062 mm

24.2062 mm

N/A

-

7 Weeks

表面贴装

32

160mA

RAM, SDR, SRAM - Asynchronous

2009

e3

yes

活跃

3 (168 Hours)

32

Matte Tin (Sn) - annealed

70°C

0°C

5V

DUAL

J BEND

260

1

5V

COMMERCIAL

Parallel

128kB

1

12 ns

3-STATE

17b

1 Mb

COMMON

Asynchronous

8b

5.5V

4.5V

3.683mm

20.9mm

10.2mm

2.2mm

无

符合RoHS标准

无铅

N/A

-

12 Weeks

表面贴装

TSOP

44

RAM, SDR, SRAM - Asynchronous

2011

e3

yes

活跃

3 (168 Hours)

44

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

鸥翼

260

1

0.8mm

30

INDUSTRIAL

Parallel

128kB

1

10 ns

3-STATE

16b

1 Mb

COMMON

Asynchronous

16b

3.6V

3.15V

18.41mm

10.16mm

1mm

无

符合RoHS标准

无铅

N/A

-

7 Weeks

表面贴装

32

130mA

RAM, SDR, SRAM - Asynchronous

2013

e3

yes

活跃

3 (168 Hours)

32

Matte Tin (Sn) - annealed

70°C

0°C

3.3V

DUAL

J BEND

260

1

COMMERCIAL

Parallel

128kB

1

12 ns

3-STATE

17b

1 Mb

COMMON

Asynchronous

8b

3V

3.6V

3V

3.7592mm

21.95mm

7.6mm

2.67mm

无

符合RoHS标准

无铅

N/A

-

12 Weeks

表面贴装

TSOP

44

145mA

RAM, SDR, SRAM - Asynchronous

2008

e3

yes

活跃

3 (168 Hours)

44

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

鸥翼

260

1

0.8mm

30

不合格

INDUSTRIAL

Parallel

512kB

1

15 ns

3-STATE

19b

4 Mb

COMMON

Asynchronous

8b

3V

3.6V

3V

18.41mm

10.16mm

1mm

符合RoHS标准

无铅

N/A

-

8 Weeks

表面贴装

28

150mA

RAM, SDR, SRAM - Asynchronous

2011

e3

yes

活跃

3 (168 Hours)

28

EAR99

Matte Tin (Sn) - annealed

70°C

0°C

5V

DUAL

J BEND

260

1

150mA

5V

COMMERCIAL

Parallel

32kB

1

15 ns

32KX8

3-STATE

15b

256 kb

COMMON

Asynchronous

8b

5.5V

4.5V

3.556mm

17.9mm

7.6mm

2.67mm

无

符合RoHS标准

无铅

N/A

-

12 Weeks

表面贴装

165

345mA

150MHz

RAM, SDR, SRAM

2005

e1

yes

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

流水线结构

3.3V

BOTTOM

BALL

260

1

150MHz

30

INDUSTRIAL

Parallel

1.1MB

1

6.7 ns

256KX36

3-STATE

18b

9 Mb

0.06A

COMMON

Synchronous

36b

3.465V

3.135V

15mm

13mm

1.2mm

无

符合RoHS标准

无铅

N/A

-

12 Weeks

表面贴装

44

210mA

RAM, SDR, SRAM - Asynchronous

2013

e3

yes

活跃

3 (168 Hours)

44

Matte Tin (Sn) - annealed

70°C

0°C

5V

DUAL

J BEND

260

1

5V

COMMERCIAL

Parallel

128kB

1

12 ns

3-STATE

16b

1 Mb

COMMON

Asynchronous

16b

5.5V

4.5V

3.683mm

28.6mm

10.2mm

2.9mm

无

符合RoHS标准

无铅

N/A

-

7 Weeks

表面贴装

TQFP

100

225mA

RAM, SDR, SRAM

Bulk

2008

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

3.3V

QUAD

鸥翼

260

1

0.5mm

30

COMMERCIAL

Parallel

64kB

2

15 ns

3-STATE

30b

512 kb

0.003A

COMMON

Asynchronous

16b

3V

3.6V

3V

14mm

14mm

1.4mm

无

符合RoHS标准

无铅

N/A

-

12 Weeks

表面贴装

28

145mA

RAM, SDR, SRAM - Asynchronous

Tape & Reel

2011

e3

yes

活跃

3 (168 Hours)

28

EAR99

Matte Tin (Sn) - annealed

70°C

0°C

5V

DUAL

J BEND

260

1

5V

COMMERCIAL

Parallel

32kB

1

25 ns

32KX8

3-STATE

15b

256 kb

COMMON

Asynchronous

8b

5.5V

4.5V

3.556mm

17.9mm

7.6mm

2.67mm

无

符合RoHS标准

无铅

N/A

-

12 Weeks

表面贴装

TSOP

44

155mA

RAM, SDR, SRAM - Asynchronous

2008

e3

yes

活跃

3 (168 Hours)

44

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

鸥翼

260

1

0.8mm

30

INDUSTRIAL

Parallel

512kB

1

12 ns

3-STATE

19b

4 Mb

COMMON

Asynchronous

8b

3V

3.6V

3V

18.41mm

10.16mm

1mm

无

符合RoHS标准

无铅