Advanced 2N6439

包装/外壳

316-01

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

146 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

10

Unit Weight

0.836769 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Gain Bandwidth Product fT

400 MHz

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Collector- Emitter Voltage VCEO Max

33 V

包装

Tray

类型

射频双极功率

子类别

Transistors

技术

Si

工作频率

400 MHz

产品类别

射频双极晶体管

晶体管类型

双极电源

产品类别

射频双极晶体管