Advanced MRF555T

包装/外壳

317D-02

Emitter- Base Voltage VEBO

3 V

Pd - Power Dissipation

3 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

50

Unit Weight

0.015104 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Collector- Emitter Voltage VCEO Max

16 V

包装

Tray

类型

射频双极小信号

子类别

Transistors

技术

Si

工作频率

470 MHz

产品类别

射频双极晶体管

晶体管类型

Bipolar

连续集电极电流

500 mA

产品类别

射频双极晶体管