Advanced BLF861A

包装/外壳

Axial

供应商器件包装

Axial

Unit Weight

0.619058 oz

Factory Pack QuantityFactory Pack Quantity

1

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Vds - Drain-Source Breakdown Voltage

65 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

- 65 C

Mounting Styles

法兰安装

Rds On - Drain-Source Resistance

160 mOhms

Id - Continuous Drain Current

18 A

操作温度

-55°C ~ 250°C

系列

Military, MIL-PRF-39007, RWR80S

包装

Bulk

尺寸/尺寸

0.094 Dia x 0.406 L (2.39mm x 10.31mm)

容差

±1%

零件状态

活跃

终止次数

2

温度系数

±20ppm/°C

类型

射频功率MOSFET

电阻

330 Ohms

组成

Wirewound

功率(瓦特)

2W

子类别

MOSFETs

技术

Si

工作频率

860 MHz

失败率

R (0.01%)

输出功率

150 W

产品类别

射频MOSFET晶体管

增益

14.5 dB

特征

Military, Moisture Resistant

产品类别

射频MOSFET晶体管

座位高度(最大)

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