Advanced MRF587

包装/外壳

Case244-04

Emitter- Base Voltage VEBO

2.5 V

Pd - Power Dissipation

5 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

50

Unit Weight

0.429323 oz

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Collector- Emitter Voltage VCEO Max

17 V

包装

Tray

类型

射频双极功率

子类别

Transistors

技术

Si

工作频率

500 MHz

产品类别

射频双极晶体管

晶体管类型

双极电源

连续集电极电流

200 mA

产品类别

射频双极晶体管