Advanced SD2932

包装/外壳

Axial

供应商器件包装

Axial

Vds - Drain-Source Breakdown Voltage

125 V

Pd - Power Dissipation

500 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

5 V

Unit Weight

0.803952 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Id - Continuous Drain Current

40 A

Rds On - Drain-Source Resistance

5 mOhms

操作温度

-65°C ~ 175°C

系列

Military, MIL-PRF-55182/01, RNC55

包装

Bulk

尺寸/尺寸

0.094 Dia x 0.250 L (2.39mm x 6.35mm)

容差

±0.5%

零件状态

活跃

终止次数

2

温度系数

±25ppm/°C

类型

射频功率MOSFET

电阻

107 kOhms

组成

Metal Film

功率(瓦特)

0.125W, 1/8W

子类别

MOSFETs

技术

Si

工作频率

250 MHz

失败率

S (0.001%)

配置

Single

输出功率

300 W

产品类别

射频MOSFET晶体管

增益

15 dB

特征

Military, Moisture Resistant, Weldable

产品类别

射频MOSFET晶体管

座位高度(最大)

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