Advanced Power Technology APT110GL100JN
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APT110GL100JN
42-APT110GL100JN
晶体管 - IGBT - 单个
--
大陆
立即发货

Insulated Gate Bipolar Transistor, 110A I(C), 1000V V(BR)CES, N-Channel, ISOTOP-4
1最小包装量--
APT110GL100JN详情
Advanced Power Technology APT110GL100JN重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
4
晶体管元件材料
SILICON
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PUFM-X4
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
ECCN 代码
EAR99
附加功能
低导通损耗
HTS代码
8541.29.00.95
端子位置
UPPER
终端形式
UNSPECIFIED
Reach合规守则
unknown
JESD-30代码
R-PUFM-X4
资历状况
不合格
配置
SINGLE
箱体转运
ISOLATED
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
110 A
集电极-发射器电压-最大值
1000 V
VCEsat-最大值
3 V
环境耗散-最大值
415 W
APT110GL100JN拓展信息
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