Advanced Power Technology APT50GF60LRD
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APT50GF60LRD
42-APT50GF60LRD
晶体管 - IGBT - 单个
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大陆
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Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
1最小包装量--
APT50GF60LRD详情
Advanced Power Technology APT50GF60LRD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Nom (toff)
460 ns
Turn-on Time-Nom (ton)
120 ns
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
锡铅
附加功能
快速切换
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
箱体转运
COLLECTOR
晶体管应用
电源控制
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-264AA
最大耗散功率(Abs)
300 W
集电极电流-最大值(IC)
80 A
集电极-发射器电压-最大值
600 V
栅极-发射极电压-最大值
20 V
栅极-发射极Thr电压-最大值
6.5 V
APT50GF60LRD拓展信息
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