Advanced Power Technology APT15GP60BDF1
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APT15GP60BDF1
42-APT15GP60BDF1
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
1最小包装量--
APT15GP60BDF1详情
Advanced Power Technology APT15GP60BDF1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
TO-247, 3 PIN
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Nom (toff)
157 ns
Turn-on Time-Nom (ton)
20 ns
ECCN 代码
EAR99
附加功能
低导通损耗
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
箱体转运
COLLECTOR
晶体管应用
电源控制
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-247AD
集电极电流-最大值(IC)
56 A
集电极-发射器电压-最大值
600 V
APT15GP60BDF1拓展信息
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
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