Advanced Power Technology APT35GP120B2DF2
- 收藏
- 对比
APT35GP120B2DF2
42-APT35GP120B2DF2
晶体管 - IGBT - 单个
--
大陆
立即发货

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3
1最小包装量--
APT35GP120B2DF2详情
Advanced Power Technology APT35GP120B2DF2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
IN-LINE, R-PSIP-T3
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Turn-off Time-Nom (toff)
220 ns
Turn-on Time-Nom (ton)
36 ns
ECCN 代码
EAR99
附加功能
低导通损耗
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSIP-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
箱体转运
COLLECTOR
晶体管应用
电源控制
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
96 A
集电极-发射器电压-最大值
1200 V
APT35GP120B2DF2拓展信息
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology







哦! 它是空的。