Allegro MicroSystems DKI04077

EU RoHS

符合免除

ECCN (US)

EAR99

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

47

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (MOhm)

8.9@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|18.5@10V

Typical Gate Charge @ 10V (nC)

18.5

Typical Input Capacitance @ Vds (pF)

1470@25V

Maximum Power Dissipation (mW)

37000

Typical Fall Time (ns)

7.1

Typical Rise Time (ns)

3.4

Typical Turn-Off Delay Time (ns)

12.5

Typical Turn-On Delay Time (ns)

2.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

活跃

配置

单排双泄

信道型

N