Allegro MicroSystems SKI10297

EU RoHS

符合免除

ECCN (US)

EAR99

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

34

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (MOhm)

28.8@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|36.5@10V

Typical Gate Charge @ 10V (nC)

36.5

Typical Input Capacitance @ Vds (pF)

2540@25V

Maximum Power Dissipation (mW)

90000

Typical Fall Time (ns)

9.4

Typical Rise Time (ns)

4.4

Typical Turn-Off Delay Time (ns)

21.9

Typical Turn-On Delay Time (ns)

4.7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

Obsolete

配置

单排双泄

信道型

N