Allegro MicroSystems EKI04036

EU RoHS

符合免除

ECCN (US)

EAR99

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

80

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (MOhm)

3.9@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|56.1@10V

Typical Gate Charge @ 10V (nC)

56.1

Typical Input Capacitance @ Vds (pF)

3910@25V

Maximum Power Dissipation (mW)

116000

Typical Fall Time (ns)

17.9

Typical Rise Time (ns)

8.4

Typical Turn-Off Delay Time (ns)

28.9

Typical Turn-On Delay Time (ns)

6.2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

NRND

配置

单排双泄

信道型

N