Allegro MicroSystems GKI04101

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

9

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (MOhm)

11.6@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|13.3@10V

Typical Gate Charge @ 10V (nC)

13.3

Typical Input Capacitance @ Vds (pF)

990@25V

Maximum Power Dissipation (mW)

3100

Typical Fall Time (ns)

4.7

Typical Rise Time (ns)

2.2

Typical Turn-Off Delay Time (ns)

9.6

Typical Turn-On Delay Time (ns)

1.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

活跃

配置

单四漏三源

信道型

N