AMI Semiconductor FCP104N60

包装/外壳

TO-220-3

安装类型

通孔

供应商器件包装

TO-220-3

RoHS

Non-Compliant

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 250µA

Power Dissipation (Max)

357W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

37A (Tc)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

包装

Tube

系列

SuperFET® II

操作温度

-55°C ~ 150°C (TJ)

湿度敏感性等级(MSL)

1 (Unlimited)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

104 mOhm @ 18.5A, 10V

输入电容(Ciss)(Max)@Vds

4165pF @ 380V

门极电荷(Qg)(最大)@Vgs

82nC @ 10V

漏源电压 (Vdss)

600V

Vgs（最大值）

±20V

场效应管特性

-