AMI Semiconductor FCP125N65S3

底架

Brackets

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220-3

RoHS

Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Continuous Drain (Id) @ 25℃

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

181W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 2.4mA

操作温度

-55°C ~ 150°C (TJ)

系列

SuperFET® III

湿度敏感性等级(MSL)

1 (Unlimited)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

125 mOhm @ 12A, 10V

输入电容(Ciss)(Max)@Vds

1940pF @ 400V

门极电荷(Qg)(最大)@Vgs

46nC @ 10V

漏源电压 (Vdss)

650V

Vgs（最大值）

±30V

场效应管特性

-