AMI Semiconductor FDB060AN08A0
- 收藏
- 对比
FDB060AN08A0
137-FDB060AN08A0
晶体管 - FET,MOSFET - 单个
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

FDB060AN08A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from AMI Semiconductor stock available at utmel
1最小包装量--
FDB060AN08A0详情
AMI Semiconductor FDB060AN08A0重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D²PAK
RoHS
Compliant
Current - Continuous Drain (Id) @ 25℃
16A (Ta), 80A (Tc)
Other Names
FDB060AN08A0-ND FDB060AN08A0TR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (Max)
255W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
操作温度
-55°C ~ 175°C (TJ)
系列
PowerTrench®
包装
Tape & Reel (TR)
湿度敏感性等级(MSL)
1 (Unlimited)
终端
Screw
技术
MOSFET (Metal Oxide)
线规(最大值)
12 AWG
线规(最小值)
26 AWG
极数
8
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
6 mOhm @ 80A, 10V
输入电容(Ciss)(Max)@Vds
5150pF @ 25V
门极电荷(Qg)(最大)@Vgs
95nC @ 10V
漏源电压 (Vdss)
75V
Vgs(最大值)
±20V
场效应管特性
-
无铅
无铅
FDB060AN08A0拓展信息
AMI Semiconductor
AMI Semiconductor
AMI Semiconductor
AMI Semiconductor
AMI Semiconductor
AMI Semiconductor
AMI Semiconductor
AMI Semiconductor
AMI Semiconductor
AMI Semiconductor







哦! 它是空的。