AMI Semiconductor FDD10AN06A0-F085
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FDD10AN06A0-F085
137-FDD10AN06A0-F085
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
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FDD10AN06A0-F085 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from AMI Semiconductor stock available at utmel
1最小包装量--
FDD10AN06A0-F085详情
AMI Semiconductor FDD10AN06A0-F085重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
TO-252AA
RoHS
Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃
11A (Ta)
Other Names
FDD10AN06A0-F085CT FDD10AN06A0_F085CT FDD10AN06A0_F085CT-ND
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
135W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250µA
操作温度
-55°C ~ 175°C (TJ)
系列
Automotive, AEC-Q101, PowerTrench®
包装
Cut Tape (CT)
湿度敏感性等级(MSL)
1 (Unlimited)
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
10.5 mOhm @ 50A, 10V
输入电容(Ciss)(Max)@Vds
1840pF @ 25V
门极电荷(Qg)(最大)@Vgs
37nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
场效应管特性
-
无铅
无铅
FDD10AN06A0-F085拓展信息
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