AMI Semiconductor FQD13N10LTM

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

D-Pak

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Other Names

FQD13N10LTMCT

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Power Dissipation (Max)

2.5W (Ta), 40W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

QFET®

包装

Cut Tape (CT)

湿度敏感性等级(MSL)

1 (Unlimited)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

180 mOhm @ 5A, 10V

输入电容(Ciss)(Max)@Vds

520pF @ 25V

门极电荷(Qg)(最大)@Vgs

12nC @ 5V

漏源电压 (Vdss)

100V

Vgs（最大值）

±20V

场效应管特性

-