Atmel (Microchip Technology) APT43GA90BD30
- 收藏
- 对比
APT43GA90BD30
225-APT43GA90BD30
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

IGBT Transistors FG, IGBT-COMBI, 900V, TO-247View in Development Tools Selector
1最小包装量--
APT43GA90BD30详情
Atmel (Microchip Technology) APT43GA90BD30重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
900 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
78 A
Pd - Power Dissipation
337 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
78 A
Gate-Emitter Leakage Current
100 nA
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
1.340411 oz
包装
Tube
配置
Single
工作温度范围
- 55 C to + 150 C
连续集电极电流
78 A
高度
5.31 mm
长度
21.46 mm
宽度
16.26 mm
APT43GA90BD30拓展信息
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)







哦! 它是空的。