Atmel (Microchip Technology) APT75GP120B2G

包装/外壳

T-Max-3

RoHS

Details

Mounting Styles

通孔

Collector- Emitter Voltage VCEO Max

1.2 kV

Collector-Emitter Saturation Voltage

3.3 V

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Continuous Collector Current at 25 C

100 A

Pd - Power Dissipation

1.042 kW

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Continuous Collector Current Ic Max

100 A

Gate-Emitter Leakage Current

100 nA

Factory Pack QuantityFactory Pack Quantity

1

Tradename

POWER MOS 7 IGBT

Unit Weight

0.580821 oz

包装

Tube

配置

Single

工作温度范围

- 55 C to + 150 C

连续集电极电流

100 A

高度

5.31 mm

长度

21.46 mm

宽度

16.26 mm