Atmel (Microchip Technology) APT25GP90BDQ1G
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APT25GP90BDQ1G
225-APT25GP90BDQ1G
晶体管 - IGBT - 单个
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IGBT Transistors FG, IGBT-COMBI, 900V, TO-247, RoHSView in Development Tools Selector
1最小包装量--
APT25GP90BDQ1G详情
Atmel (Microchip Technology) APT25GP90BDQ1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
900 V
Collector-Emitter Saturation Voltage
3.2 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
72 A
Pd - Power Dissipation
417 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Factory Pack QuantityFactory Pack Quantity
1
包装
Tube
配置
Single
APT25GP90BDQ1G拓展信息
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)







哦! 它是空的。