Atmel (Microchip Technology) APT50GT120JRDQ2
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APT50GT120JRDQ2
225-APT50GT120JRDQ2
晶体管 - IGBT - 单个
SOT-227-4
大陆
立即发货

IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOPView in Development Tools Selector
1最小包装量--
APT50GT120JRDQ2详情
Atmel (Microchip Technology) APT50GT120JRDQ2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-227-4
RoHS
Details
Mounting Styles
螺钉安装
Collector- Emitter Voltage VCEO Max
1.2 kV
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Continuous Collector Current at 25 C
72 A
Pd - Power Dissipation
379 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Gate-Emitter Leakage Current
300 nA
Factory Pack QuantityFactory Pack Quantity
1
包装
Tube
配置
Single
APT50GT120JRDQ2拓展信息
Atmel (Microchip Technology)
Atmel (Microchip Technology)
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Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
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