Central Semiconductor 2N4900 TIN/LEAD

包装/外壳

TO-66-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

-

Collector-Emitter Saturation Voltage

600 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

25 W

Gain Bandwidth Product fT

3 MHz

DC Collector/Base Gain hfe Min

20

DC Current Gain hFE Max

150

Factory Pack QuantityFactory Pack Quantity

30

系列

2N4900

包装

Tube

配置

Single

集电极基极电压(VCBO)

80 V

连续集电极电流

1 A