Central Semiconductor MPSA66 TIN/LEAD
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- 对比
MPSA66 TIN/LEAD
420-MPSA66 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Darlington Transistors PNP 30Vcbo 30Vceo 8.0Vebo 100mA 6.0pF
1最小包装量--
MPSA66 TIN/LEAD详情
Central Semiconductor MPSA66 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
RoHS
Details
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
30 V
Emitter- Base Voltage VEBO
8 V
Pd - Power Dissipation
625 mW
Mounting Styles
通孔
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
40000 at 5 V, 100 mA
Gain Bandwidth Product fT
100 MHz
Factory Pack QuantityFactory Pack Quantity
2500
系列
MPSA66
包装
Bulk
配置
Single
集电极基极电压(VCBO)
30 V
连续集电极电流
500 mA
MPSA66 TIN/LEAD拓展信息
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