Central Semiconductor PN4355 TIN/LEAD

包装/外壳

TO-92-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

60 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

150 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

625 mW

Gain Bandwidth Product fT

500 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

60 at 100 uA, 10 V

DC Current Gain hFE Max

400 at 10 mA, 19 V

Factory Pack QuantityFactory Pack Quantity

2500

Tradename

0

系列

PN4355

包装

Bulk

配置

Single

集电极基极电压(VCBO)

60 V

连续集电极电流

500 mA