Central Semiconductor CDM22010-650 SL PBFREE

包装/外壳

TO-220-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

10 A

Rds On - Drain-Source Resistance

880 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

8 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

156 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

50

Unit Weight

0.068784 oz

Package Description

,

Manufacturer Part Number

CDM22010-650SLPBFREE

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.72

包装

Tube

Reach合规守则

unknown

配置

Single

通道数量

1 Channel