Central Semiconductor CMPDM7002AETR
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CMPDM7002AETR
420-CMPDM7002AETR
晶体管 - FET,MOSFET - 单个
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Small Signal Field-Effect Transistor, 0.3A I(D), 63V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3PIN
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CMPDM7002AETR详情
Central Semiconductor CMPDM7002AETR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
RoHS
Compliant
Package Description
SMALL OUTLINE, R-PDSO-G3
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Manufacturer Part Number
CMPDM7002AETR
Package Shape
RECTANGULAR
Manufacturer
Central Semiconductor Corp
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
Risk Rank
5.58
Drain Current-Max (ID)
0.3 A
ECCN 代码
EAR99
HTS代码
8541.21.00.95
端子位置
DUAL
终端形式
鸥翼
Reach合规守则
compliant
JESD-30代码
R-PDSO-G3
配置
SINGLE WITH BUILT-IN DIODE
通道数量
1
操作模式
增强型MOSFET
晶体管应用
SWITCHING
漏源电压 (Vdss)
60 V
极性/通道类型
N-CHANNEL
连续放电电流(ID)
300 mA
漏极-源极导通最大电阻
1.4 Ω
DS 击穿电压-最小值
63 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
漏源电阻
1.4 Ω
反馈上限-最大值 (Crss)
5 pF
CMPDM7002AETR拓展信息
Central Semiconductor
Central Semiconductor
Central Semiconductor
Central Semiconductor
Central
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Central Semiconductor
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