参数名
参数值
参数名
参数值
包装/外壳
SOT-23-3
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
45 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
700 mV
Maximum DC Collector Current
500 mA
Pd - Power Dissipation
300 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
160
DC Current Gain hFE Max
400
Factory Pack QuantityFactory Pack Quantity
3000
Unit Weight
0.000282 oz
Package Description
SMALL OUTLINE, R-PDSO-G3
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Transition Frequency-Nom (fT)
100 MHz
Manufacturer Part Number
BC817-25-G
Package Shape
RECTANGULAR
Number of Elements
1
Part Life Cycle Code
生命周期结束
Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
Risk Rank
6.22
系列
BC817-25
包装
MouseReel
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PDSO-G3
配置
Single
晶体管应用
AMPLIFIER
极性/通道类型
NPN
集电极基极电压(VCBO)
50 V
集电极电流-最大值(IC)
0.5 A
最小直流增益(hFE)
160
连续集电极电流
500 mA
集电极-发射器电压-最大值
45 V