Comchip Technology BC847C-G

包装/外壳

SOT-23-3

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

45 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

500 mV

Pd - Power Dissipation

200 mW

Gain Bandwidth Product fT

100 MHz

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

420

DC Current Gain hFE Max

800

Factory Pack QuantityFactory Pack Quantity

3000

Unit Weight

0.000282 oz

Operating Temperature-Max

150

Transition Frequency-Nom (fT)

100

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Rohs Code

有

Manufacturer Part Number

BC847C-G

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

COMCHIP TECHNOLOGY CO LTD

Risk Rank

5.77

系列

BC847

包装

Reel

JESD-609代码

e3

端子表面处理

Tin (Sn)

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

JESD-30代码

R-PDSO-G3

配置

Single

极性/通道类型

NPN

集电极基极电压(VCBO)

50 V

最大耗散功率(Abs)

.2

集电极电流-最大值(IC)

.1

最小直流增益（hFE）

420

连续集电极电流

0.1 A

集电极-发射器电压-最大值

45 V