Comchip Technology BSS84W-G

包装/外壳

SOT-323-3

安装类型

表面贴装

供应商器件包装

SOT-323

RoHS

过渡中

Mounting Styles

SMD/SMT

Transistor Polarity

P-Channel

Vds - Drain-Source Breakdown Voltage

50 V

Id - Continuous Drain Current

130 mA

Rds On - Drain-Source Resistance

10 Ohms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

1.6 V

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

200 mW

Channel Mode

Enhancement

Forward Transconductance - Min

50 mS

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

18 nS

Typical Turn-On Delay Time

10 nS

Unit Weight

0.000212 oz

Package

Tape & Reel (TR)

Base Product Number

BSS84

Current - Continuous Drain (Id) @ 25℃

130mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

厂商

芯片技术

Power Dissipation (Max)

200mW (Ta)

Product Status

活跃

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BSS84W-G

Part Life Cycle Code

活跃

Samacsys Description

MOSFET 50V 0.2A SOT-323

Ihs Manufacturer

COMCHIP TECHNOLOGY CO LTD

Risk Rank

5.54

包装

切割胶带

操作温度

150°C (TJ)

系列

-

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

时间@峰值回流温度-最大值(s)

未说明

配置

Single

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

10Ohm @ 100mA, 5V

不同 Id 时 Vgs(th)（最大值）

2V @ 1mA

输入电容(Ciss)(Max)@Vds

45 pF @ 25 V

漏源电压 (Vdss)

50 V

Vgs（最大值）

±20V

晶体管类型

1 P-Channel

场效应管特性

-