Diodes DMN1032UCP4-7

包装/外壳

4-XFBGA, DSBGA

安装类型

表面贴装

供应商器件包装

X1-DSN1010-4 (Type B)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.2V @ 250µA

Product Status

活跃

Power Dissipation (Max)

790mW (Ta)

厂商

Diodes Incorporated

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Current - Continuous Drain (Id) @ 25℃

5A (Ta)

Base Product Number

DMN1032

Package

Bulk

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Factory Pack QuantityFactory Pack Quantity

3000

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

28mOhm @ 1A, 10V

输入电容(Ciss)(Max)@Vds

325 pF @ 6 V

门极电荷(Qg)(最大)@Vgs

3.2 nC @ 4.5 V

漏源电压 (Vdss)

12 V

Vgs（最大值）

±8V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET