Diodes DMN6068SEQ-13

包装/外壳

QFN

安装类型

表面贴装

供应商器件包装

SOT-223-3

Standard Frequency

10

Operating Temp Range

-40C to 85C

Operating Supply Voltage (Max)

1.98(V)

Operating Supply Voltage (Min)

1.62(V)

Programmable

无

Continuous Drain Current Id

5.6

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

3.6 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

3.7 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.003538 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

19.7 S

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

10.3 nC

Rds On - Drain-Source Resistance

68 mOhms

RoHS

Details

Typical Turn-Off Delay Time

11.9 ns

Id - Continuous Drain Current

5.6 A

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Diodes Incorporated

Power Dissipation (Max)

2W (Ta)

Product Status

活跃

包装

Bulk

操作温度

-55°C ~ 150°C (TJ)

系列

Automotive, AEC-Q101

类型

CLOCK OSCILLATOR

子类别

MOSFETs

技术

Si

频率稳定性

±20(ppm)

对称性-最大值

55(%)

配置

Single

通道数量

1 Channel

负载电容

15(pF)

功率耗散

3.7

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

68mOhm @ 12A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 250µA

输入电容(Ciss)(Max)@Vds

502 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

10.3 nC @ 10 V

上升时间

10.8 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET