DMT10H009LK3-13详情
Diodes DMT10H009LK3-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-252-3
安装类型
表面贴装
供应商器件包装
TO-252, (D-Pak)
Package
Bulk
厂商
Multi-Tech Systems Inc.
Product Status
活跃
For Use With/Related Products
MultiTech Conduit®
Continuous Drain Current Id
90
MSL
MSL 1 - Unlimited
Qualification
-
Vds - Drain-Source Breakdown Voltage
100 V
Moisture Sensitive
有
Typical Turn-On Delay Time
5.4 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
1.7 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.011640 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
9 mOhms
RoHS
Details
Typical Turn-Off Delay Time
28.3 ns
Id - Continuous Drain Current
90 A
Base Product Number
DMT10
Current - Continuous Drain (Id) @ 25℃
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
1.7W (Ta)
系列
MultiTech Conduit®AP
包装
切割胶带
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
功率耗散
3
配件类型
Transformer
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
9mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250µA
输入电容(Ciss)(Max)@Vds
2309 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
20 nC @ 4.5 V
上升时间
10.6 ns
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
产品类别
MOSFET
晶体管类型
1 N-Channel
信道型
N通道
场效应管特性
-
产品类别
MOSFET
DMT10H009LK3-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated








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